Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

2012 ◽  
Author(s):  
C. R. Yan ◽  
J. F. Chen ◽  
C. Y. Lin ◽  
H. T. Hsiu ◽  
Y. C. Liao ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Kirk Effect ◽  
State Breakdown ◽  
Junction Structure

FACTORS LIMITING THE MAXIMUM OPERATING VOLTAGE OF MICROWAVE DEVICES

2000 ◽  
Vol 10 (01) ◽  
pp. 119-128
Author(s):  
ENRICO ZANONI ◽  
GAUDENZIO MENEGHESSO ◽  
ALDO DI CARLO ◽  
PAOLO LUGLI ◽  
LORENZO ROSSI
Keyword(s):  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
Microwave Devices ◽  
Operating Voltage ◽  
High Electron ◽  
Hot Carriers ◽  
Hot Carrier ◽  
Electron Mobility Transistors ◽  
State Breakdown ◽  
Pulsed Measurements

The operating voltage of advanced microwave devices is currently limited by impact-ionization and breakdown effects. An extended study of the effects of hot carriers on the breakdown behavior and reliability of GaAs-based and InP-based HEMTs (high electron mobility transistors) has been carried out by means of pulsed measurements, electroluminescence spectroscopy and microscopy and Monte Carlo simulations. We show that the parasitic bipolar effect, which explains kink effects in HEMTs, can also induce regenerative phenomena eventually leading to on-state breakdown. Results concerning the effects of hot carrier aging on GaAs-based and InP-based HEMTs are summarized.

scholarly journals Analysis of Anti-JFET for 600V VDMOS and HCI Reliability

2018 ◽  
Vol 201 ◽  
pp. 05001
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Chiu-Chung Lai ◽  
Ravi Deivasigamani
Keyword(s):  
Breakdown Voltage ◽  
Impact Ionization ◽  
Carrier Injection ◽  
Implantation Energy ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
General Expectation ◽  
Proportional Relationship ◽  
State Breakdown ◽  
Voltage Degradation

In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift doping concentration can provide the very best on-resistance of the device but also decrease breakdown voltage. It also has a proportional relationship with threshold voltage degradation. In this paper, we report the anti-JFET implantation energy influence effect electric potential distribution, the highest impact ionization shifted from the silicon surface to deeper. It will have less hot carrier impact, and we have found higher breakdown voltage. The anti-JEFT implantation is critical for on-resistance off-state breakdown voltage optimization, However the high field and high impact ionization near the gate region will cause severe hot carrier Injection problem. The general expectation of high voltage VDMOS transistor is to have higher breakdown voltage, less degradation due to hot carrier injection and better on-resistance.

Rho GTPase overactivation by E. coli CNF-1 disrupts epithelial tight junction structure and barrier function

2001 ◽  
Vol 120 (5) ◽  
pp. A110-A110
Author(s):  
A HOPKINS ◽  
S WALS ◽  
P VERKADE ◽  
P BOQUET ◽  
A NUSRAT
Keyword(s):  
Tight Junction ◽  
Barrier Function ◽  
Rho Gtpase ◽  
E Coli ◽  
Epithelial Tight Junction ◽  
Junction Structure

PERIODIC OSCILLATIONS AND TURBULENCE OF HOT-CARRIER PLASMA AT 4.2 K IN n-GaAs

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-51-C7-56
Author(s):  
K. Aoki ◽  
T. Kobayashi ◽  
K. Yamamoto
Keyword(s):  
Periodic Oscillations ◽  
Hot Carrier

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation
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