Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs

2013 ◽  
Author(s):  
Y. Kamakura ◽  
K. Kukita ◽  
I.N. Adisusilo ◽  
S. Koba ◽  
H. Tsuchiya
2021 ◽  
Vol 104 (2) ◽  
pp. 003685042110259
Author(s):  
Xiao Guoquan ◽  
Wang Huaming ◽  
Chen Lin ◽  
Hong Xiaobin

In the process of vehicle development, the unsteady simulation of thermal management system is very important. A 3D-CFD calculation model of vehicle thermal management is established, and simulations were undertaken for uphill with full loads operations condition. The steady results show that the surface heat transfer coefficient increases to the quadratic parabolic relationship. The unsteady results show that the pulsating temperatures of exhaust and external airflow are higher than about 50°C and lower than 10°C, respectively, and the heat dissipating capacities are higher than about 11%. Accordingly, the conversion equivalent exhaust velocity increased by 1.67%, and the temperature distribution trend is basically the same as unsteady results. The comparison results show that the difference in the under-hood should be not noted, and that the predicted exhaust system surface temperatures using steady velocity equivalent method are low less 10°C than the unsteady results. These results show the steady velocity equivalent method can be used to predict the unsteady heat transfer effect of vehicle thermal management system, and the results obtained by this method are basically consistent with the unsteady results. It will greatly save computing resources and shorten the cycle in the early development of the vehicle thermal management system.


2021 ◽  
Vol 104 ◽  
pp. 178-188
Author(s):  
Xinwen Li ◽  
Yingchun Wu ◽  
Huafeng Chen ◽  
Xijiong Chen ◽  
Yonggang Zhou ◽  
...  

2021 ◽  
Vol 2057 (1) ◽  
pp. 012111
Author(s):  
A A Barinov ◽  
V I Khvesyuk

Abstract Because of the rapid development of semiconductor electronics and the tendency to size reduction of the elements of transistors, there is an urgent task of assessing the heat transfer regime, which determines the ability to maintain the required thermal regime. In this work, the heat transfer in micro- and nanostructures in silicon is considered, and a comprehensive analysis of factors determining the heat transfer regime is carried out. In particular, the effect of the interaction of phonons with the sample boundaries in the quasi-ballistic and ballistic heat transfer regimes, where these processes play a decisive role, is evaluated using statistical model of phonon scattering on rough boundaries of samples.


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