Memory Characteristics of Organic Thin Film Transistor Using Polypeptides as Gate Dielectric Layer: Effect of Side Chains of Polypeptides on Crystallinity and Ferroelectric Characteristics of Their Thin Films

2016 ◽  
Author(s):  
T. Nobeshima ◽  
K. Oka ◽  
T. Ikoga ◽  
K. Nakamura ◽  
N. Kobayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Side Chains ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Layer Effect ◽  
Memory Characteristics

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

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