Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation

2016 ◽  
Author(s):  
J. Lee ◽  
Y. Cho ◽  
S. Cho
Keyword(s):  
Ab Initio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Device Simulation ◽  
Accurate Design ◽  
Effect Transistor

MRS 2001 (Boston): Design and Quantification of a Nanoscale Field Effect Transistor: Distributed Response Analysis for Investigating Conductive Behaviour.

2001 ◽  
Vol 706 ◽  
Author(s):  
Marc in het Panhuis ◽  
Jonathan N. Coleman ◽  
Paul. A. Popelier ◽  
Brian Foley ◽  
Robert W. Munn ◽  
...  
Keyword(s):  
Electric Field ◽  
Ab Initio ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chem Phys ◽  
Computational Approach ◽  
Response Analysis ◽  
Switching Element ◽  
Molecular Switching ◽  
Effect Transistor

AbstractA new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951-7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.

A Device Simulation-Based Investigation on Dielectrically Modulated Fringing Field-Effect Transistor for Biosensing Applications

2017 ◽  
Vol 17 (5) ◽  
pp. 1399-1406 ◽  
Author(s):  
Sayan Kanungo ◽  
Sanatan Chattopadhyay ◽  
Kunal Sinha ◽  
Partha Sarathi Gupta ◽  
Hafizur Rahaman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Device Simulation ◽  
Simulation Based ◽  
Fringing Field ◽  
Effect Transistor ◽  
Fringing Field Effect
Sign in / Sign up

Export Citation Format

Share Document