AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS

NANO ◽  
2010 ◽  
Vol 05 (02) ◽  
pp. 127-132 ◽  
Author(s):  
DIDIK ARYANTO ◽  
ZULKAFLI OTHAMAN ◽  
AMIRA S. AMERUDDIN ◽  
ABD. KHAMIM ISMAIL
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Size Composition ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Vertically Aligned

In0.5Ga0.5As quantum dots (QDs) stacked structure were studied using atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) characterization. Evolution in the dots size and dots density in the stacked structures is strongly influenced by the dot formation in the under-layer and the structure of the spacer layers. AFM results revealed that the dots formation on the top can be changed by increasing the number of stacked QDs. However, the dots formation is not vertically aligned since HR-XRD measurement gave different satellite peak on n-stacked QD structures. Room-temperature PL measurements show variation in the PL spectra, where blue-shifted PL peak positions are observed when the number of stack is increased. Variation in the HR-XRD and PL measurement is also attributed to the size, composition and density of the dots in the stacked structures.

Synthesis and Characterization of ZnO Nanorods Using Molecular Beam Epitaxy

2012 ◽  
Vol 622-623 ◽  
pp. 919-924 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
M. Yasin Raja ◽  
M.A. Hasan
Keyword(s):  
Raman Spectroscopy ◽  
Zno Nanorods ◽  
X Ray Diffraction ◽  
Type Conductivity ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
Vertically Aligned

We present the study of the growth of ZnO nanorods on p-Si (100) using MBE. Various characterization techniques such as Fourier transform infra-red (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectroscopy and capacitance – voltage (C-V) measurements were employed to analyze and assess the grown ZnO nanorods. AFM clearly demonstrated the growth of vertically aligned nanorods, however, they get diffused as the thickness of the layer is increased beyond 1 µm. C-V measurements in particular, justified p-n junction between Si/ZnO nanorods. The junction showed n-type conductivity with carrier concentration 1×1015cm-3. The source of this n-type conductivity was Zn-interstitials and the presence of Zn-interstitials was confirmed by EDAX and Raman spectroscopy. Experimental detail and results were presented that help in furtherance of our understanding of the material issues and its potential as required for the practical devices.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Characterization of kaolinite in the hardsetting clay fraction using atomic force microscopy, X-ray diffraction, and the Rietveld method

2017 ◽  
Vol 17 (8) ◽  
pp. 2144-2155 ◽  
Author(s):  
Luis Valério Prandel ◽  
Nívea Maria Piccolomini Dias ◽  
Sérgio da Costa Saab ◽  
André Maurício Brinatti ◽  
Neyde Fabíola Balarezo Giarola ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Rietveld Method ◽  
Clay Fraction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Differential height characteristics of plasmid and G-wire DNA as determined by AFM

1994 ◽  
Vol 52 ◽  
pp. 1052-1053
Author(s):  
T. C. Marsh ◽  
J. Vesenka ◽  
E. Henderson
Keyword(s):  
Plasmid Dna ◽  
Structural Characteristics ◽  
Three Dimensional ◽  
Helical Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimension One

Atomic-Force Microscopy (AFM) has become an effective tool in the three dimensional characterization of biological systems and is capable of Angstrom sensitivity in the vertical dimension. One unresolved dilemma is that the observed height (diameter) of B-DNA being about 10Å, is less than half its x-ray diffraction value. In this paper we attempt to determine the source of this discrepancy by comparing plasmid DNA co-deposited with a novel form of DNA called “G-wires” (Figure 1). G-wires are formed by G-rich sequences. They are composed of G-4 DNA, a quadruple helical structure. X-ray data of G-4 DNA gives a diameter of 27Å, comparable to that expected for B-DNA (20 to 25Å). In the AFM these structures have a significantly greater height (av. = 22 Å) compared to double stranded (av. = 7 Å) or supercoiled B-DNA (av. = 14 Å) (Figure 2). Thus, the apparent height of nucleic acids in the AFM is dependent upon their innate structural characteristics.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Growth and Characterization of AlN and GaN Thin Films Deposited on Si(111) Substrates Containing a Very Thin Al Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Zachary J. Reitmeier ◽  
Robert F. Davis
Keyword(s):  
Flow Time ◽  
Buffer Layers ◽  
Nucleation Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Aln Buffer ◽  
Peak Widths

ABSTRACTAlN films and GaN films with AlN buffer layers were deposited via metalorganic vapor phase epitaxy on Si(111) substrates previously exposed to trimethylaluminum for increasing times. Atomic force microscopy (AFM) was used to determine the influence of Al pre-flow time on the nucleation and surface morphology of the AlN and GaN films. When preceded by a 10 second Al pre-flow, AlN films feature an increased and more uniform nucleation density as compared to films deposited without Al pre-flows. Ten second Al pre-flows were also found to result in a reduction of the RMS roughness for 100 nm thick AlN films from 3.6 nm to 1.0 nm. AFM of 0.5 μm thick GaN films deposited on AlN buffers with varying pre-flow times showed reduced roughness and decreased pit density when using Al pre-flows of 10 or 20 seconds. High resolution x-ray diffraction of the GaN films showed a reduction in the average full-width halfmaximum (FWHM) of the GaN (00.2) reflection from 1076 arcsec to 914 arcsec when the AlN buffer layer was initiated with a 10 second Al pre-flow. Increasing the pre-flow time to 20 seconds and 30 seconds resulted in average (00.2) FWHM values of 925 arcsec and 928 arcsec, respectively. Similar behavior of the peak widths was observed for the (30.2) and (10.3) reflections when the pre-flow times were varied from 0 to 30 seconds.

MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL

2007 ◽  
Vol 06 (05) ◽  
pp. 407-410 ◽  
Author(s):  
I. P. KAZAKOV ◽  
V. I. KOZLOVSKY ◽  
V. P. MARTOVITSKY ◽  
YA. K. SKASYRSKY ◽  
M. D. TIBERI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Optical Scanning ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Two Phases

ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.

Characterization of a SiC/SiC composite by X-ray diffraction, atomic force microscopy and positron spectroscopies

2006 ◽  
Vol 252 (9) ◽  
pp. 3342-3351 ◽  
Author(s):  
G. Brauer ◽  
W. Anwand ◽  
F. Eichhorn ◽  
W. Skorupa ◽  
C. Hofer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force
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