Self-correcting Sun Compass, Spherical Geometry and Cue-transfers Predict Naïve Migratory Performance

Migratory orientation of many animals is inheritable, enabling naïve migrants to reach remote destinations independently following stepwise (often, nightly) geomagnetic or celestial cues. Which if any such “compass courses” can explain narrow-front trans-continental routes remains unresolved, and evident error-corrections by naïve migrants remain unexplained. We assessed robustness to errors among airborne compass courses and quantified inaugural migration performance globally, accounting for cue transfers (e.g., sun to star compass), in-flight cue maintenance, and previously-overlooked spherical-geometry (longitude) effects. We found (i) sun-compass courses partially self-correct, making them most robust between flight-steps, (ii) within nocturnal flight-steps, geomagnetic or star-compass headings outperform cue-transferred sun-compass steps, (iii) across diverse airborne migration routes, the relative favourability of sun-compass over other courses increases with increasing goal-area, required flight steps and a spherical-geometry factor. Our results can explain enhanced naïve migrant performance, observed diversity in compass-cue hierarchies, and sun-compass orientation being key to many long-distance inaugural migrations.

A four-point measurement probe for brain tissue conductivity and permittivity characterization

We present a measurement probe consisting of four platinum electrodes fused into soda-lime glass. The probe is based on a four-terminal sensing technique that uses separate pairs of current-carrying and voltage-sensing electrodes and performs more accurate measurements than the simpler and more usual two-terminal sensing technique. The electrodes are aranged within an area of 1 mm2 allowing for local characterization of different brain tissues. The operation of the probe is demonstrated in situ on post mortem porcine brain tissue by measuring the impedance spectra of grey and white matter in a frequency range of 1 kHz < f < 1 MHz. The conductivity and relative permittivity are derived from the impedance spectra using the geometry factor of the probe. The geometry factor is obtained experimentally by measuring the impedances of an electrolytical dilution series with known conductivities. The obtained conductivity of grey matter is in the order of 0.11 S/m and of white matter is in the order of 0.07 S/m over the acquired frequency range.

Electrical conductivity determination of semiconductors by utilizing photography, finite element simulation and resistance measurement

A new method is developed to measure precisely and reliably the electrical conductivity of a block-shaped semiconductor specimen using four-wire technique with electrodes in arbitrary shape and position. No effort for accurate electrode preparation is necessary anymore. This method may be especially applied to measure the conductivity of ceramics at high temperatures, when typical spring-contacts or clamp-contacts are not possible and instead wound wires are used for electrically contacting the specimen. The method comprises the following: An image of the specimen is processed to a 3D model. By applying a finite element simulation on this 3D model, a form factor (also called geometry factor) that considers the effect of the non-infinitesimally small electrodes is calculated. Together with the measured resistance (preferably in four-wire technique), the actual conductivity of the sample is derived. Experimental results confirmed the validity of the proposed method. As a limitation of the method, the conductivity of the specimen should be within the range of 0.01 Sm−1 and 106 Sm−1.

Parametric Study on the Flow Profiles of Vertical Sinter Cooling Bed Using the DEM and Taguchi Method for Waste Heat Recovery

To comprehensively understand the effectiveness of external factors on flow characteristics and realize particle flow distribution evenly in bulk layers is an essential prerequisite for improving the performance of heat transfer in vertical sinter cooling beds (VSCBs). The numerical discrete element method (DEM) was applied to investigate external geometric and operational factors, such as the aspect ratio, geometry factor, half hopper angle, normalized outlet scale, and discharge velocity. Using the Taguchi method, a statistical analysis of the effect of design factors on response was performed. In this study, we focused more on external factors than granular properties, be remodelling the external factors was more useful and reliable for actual production in industries. The results showed that the most important factor was the aspect ratio, followed by the geometry factor, normalized outlet scale, half hopper angle, and discharge velocity for the dimensionless height of mass flow. In terms of the Froude number, the most influential factor was the normalized outlet scale with a contribution ratio of 33.81%, followed by the aspect ratio (22.86%), geometry factor (17.73%), discharge velocity (17.73%), and half hopper angle (11.83%).

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mechanical stress via the piezoresistance effect. Both effects are described by an anisotropic conductivity tensor with small offdiagonal elements. This has led other authors to the conclusion that there is some kind of analogy. In both cases the output voltage depends on the geometry of the device and the size of the contacts. For Hall plates this influence is accounted for by the Hall-geometry factor. The alleged analogy proposes that the Hall-geometry factor also applies to four-terminal stress transducers. This paper shows that the analogy holds only for a limited class of devices. Moreover, it is shown that devices of different geometries may have identical magnetic field sensitivity but different mechanical stress sensitivities. Thus, shape optimization makes sense for mechanical stress sensors. In extreme cases the output voltages of vertical Hall-effect devices may have notable magnetic field sensitivity but zero mechanical stress sensitivity. As byproduct, exact analytical formulae for the equivalent resistor circuit of rectangular and circular devices with two perpendicular mirror symmetries are given. They allow for an accurate description of how mechanical stress and deformation affect the output offset voltage and the magnetic sensitivity of Hall-effect devices.