scholarly journals Illumination-induced modulation of conductivity and Gunn oscillation properties in epitaxial GaAs

2021 ◽  
Vol 129 (9) ◽  
pp. 095701
Author(s):  
Hua-Wei Hsu ◽  
Vanessa Sih
Keyword(s):  
Epitaxial Gaas ◽  
Oscillation Properties

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Electric-field profile and current control of a long epitaxial GaAs n layer

1972 ◽  
Vol 8 (4) ◽  
pp. 93 ◽  
Author(s):  
G.A. Swartz ◽  
A. Gonzalez ◽  
A. Dreeben
Keyword(s):  
Electric Field ◽  
Current Control ◽  
Field Profile ◽  
Epitaxial Gaas ◽  
Electric Field Profile

scholarly journals X-ray response of epitaxial GaAs

1999 ◽  
Vol 85 (11) ◽  
pp. 7522-7527 ◽  
Author(s):  
A. Owens ◽  
M. Bavdaz ◽  
S. Kraft ◽  
A. Peacock ◽  
S. Nenonen ◽  
...  
Keyword(s):  
X Ray ◽  
Epitaxial Gaas

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Analysis of trap spectra in LEC and epitaxial GaAs

1999 ◽  
Vol 434 (1) ◽  
pp. 61-66 ◽  
Author(s):  
J. Vaitkus ◽  
E. Gaubas ◽  
V. Kazukauskas ◽  
V. Rinkevicius ◽  
J. Storasta ◽  
...  
Keyword(s):  
Epitaxial Gaas
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