parasitic oscillation
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Laser Physics ◽  
2021 ◽  
Vol 32 (1) ◽  
pp. 015801
Author(s):  
Jiale Zhang ◽  
Jian Ma ◽  
Tingting Lu ◽  
Xiaolei Zhu

Abstract An actively Q-switched quasi-three-level Nd:YLF laser emitting at 908 nm, for the first time to our knowledge, was demonstrated. A RTP double-crystal scheme was used to realize electro-optical Q-switcher, and a L-shaped cavity structure was designed to suppress parasitic oscillation at 1047 nm. An 806 nm laser diode was used as the pump source with about 480 μs pulse width. With 46.4 mJ pump pulse energy input at repetition rate of 100 Hz, maximum output pulse energies of 0.84 mJ and 0.73 mJ were obtained with output transmissions of 6.5% and 11%, respectively. The corresponding peak pulse powers were up to 14.3 kW and 12.1 kW, and the output pulse widths were 58.6 ns and 60.3 ns. The central laser wavelengths were both at 908.3 nm with spectral bandwidth of over 0.7 nm.


2021 ◽  
Author(s):  
shijie wang ◽  
Xianfeng Lin ◽  
Zhilun Zhang ◽  
Ying-bin Xing ◽  
Lei Liao ◽  
...  

2020 ◽  
Vol 28 (3) ◽  
pp. 222-230
Author(s):  
A. E. Dormidonov ◽  
K. N. Firsov ◽  
E. M. Gavrishchuk ◽  
V. B. Ikonnikov ◽  
I. G. Kononov ◽  
...  

2020 ◽  
Vol 127 ◽  
pp. 106151
Author(s):  
Qikun Pan ◽  
Jijiang Xie ◽  
Fei Chen ◽  
Kuo Zhang ◽  
Deyang Yu ◽  
...  

Author(s):  
Xin Li ◽  
Fei Xiao ◽  
Yifei Luo ◽  
Yaoqiang Duan

2019 ◽  
Vol 34 (9) ◽  
pp. 8613-8625 ◽  
Author(s):  
Lina Wang ◽  
Junyi Yang ◽  
Haobo Ma ◽  
Zeyuan Wang ◽  
Kabir Oladele Olanrewaju ◽  
...  

Electronics ◽  
2018 ◽  
Vol 7 (8) ◽  
pp. 126 ◽  
Author(s):  
Lina Wang ◽  
Junyi Yang ◽  
Haobo Ma ◽  
Zeyuan Wang ◽  
Kabir Olanrewaju ◽  
...  

Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (CX) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of CX is also analytically derived to guide the selection of CX. To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (CJ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of CJ mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.


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