scholarly journals Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 624
Author(s):  
Ruozheng Wang ◽  
Fang Lin ◽  
Qiang Wei ◽  
Gang Niu ◽  
Hong-Xing Wang
Keyword(s):  
Thick Film ◽  
Strain Relaxation ◽  
Diamond Films ◽  
Film Surface ◽  
Heteroepitaxial Growth ◽  
Al2o3 Substrate ◽  
Single Crystal Diamond ◽  
Device Applications ◽  
O2 Plasma Treatment ◽  
O2 Plasma

This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H2/O2 plasma treatment were used to show defect distribution at the diamond/Ir/Al2O3 interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.

Heteroepitaxial Nucleation of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
B. R. Stoner ◽  
P. J. Ellis ◽  
M. T. Mcclure ◽  
S. D. Wolter
Keyword(s):  
Single Crystal ◽  
Electronic Transport ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Diamond Nucleation ◽  
Single Crystal Diamond ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTThe heteroepitaxial nucleation and eventual growth of large area single crystal diamond films has long eluded researchers interested in tapping it's many enabling properties, specifically in the field of active electronics. The uncertainty surrounding the diamond nucleation mechanism(s) and corresponding inability to carefully control this process are often blamed for the difficulty in achieving true heteroepitaxial growth. Biasenhanced nucleation (BEN) has been shown to provide in-situ control of the nucleation process. Subsequent advancements in both nucleation and deposition stages has resulted in highly oriented diamond films, approaching single crystal quality yet still plagued by arrays of medium to low angle grain boundaries that can degrade the electronic transport properties. To further improve upon these results and achieve large area, single crystal films it is believed that development must focus on the more fundamental problems of diamond nucleation. This paper presents a review of recent progress pertaining to the bias-enhanced process and focuses on data specific to the epitaxial nucleation dilemma.

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Heteroepitaxial growth of diamond films on Y3Al5O12 single crystals

2021 ◽  
pp. 125152
Author(s):  
Shulong Zhang ◽  
Chengchun Zhao ◽  
Ying Zhu ◽  
Yifei Fang ◽  
Shanming Li ◽  
...  
Keyword(s):  
Single Crystals ◽  
Diamond Films ◽  
Heteroepitaxial Growth

Influence of O2 plasma treatment on NiO x layer in perovskite solar cells

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FS07 ◽  
Author(s):  
Yoshihiko Nishihara ◽  
Masayuki Chikamatsu ◽  
Said Kazaoui ◽  
Tetsuhiko Miyadera ◽  
Yuji Yoshida
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Perovskite Solar Cells ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Diamond Films: Recent Developments

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 16-21 ◽  
Author(s):  
Dieter M. Gruen ◽  
Ian Buckley-Golder
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Nuclear Power ◽  
Large Scale ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Large Area ◽  
Technical Problems ◽  
Practical Applications ◽  
Single Crystal Diamond

Carbon in the form of diamond is the stuff of dreams, and the image of the diamond evokes deep and powerful emotions in humans. Following the successful synthesis of diamond by high-pressure methods in the 1950s, the startling development of the low-pressure synthesis of diamond films in the 1970s and 1980s almost immediately engendered great expectations of utility. The many remarkable properties of diamond due in part to its being the most atomically dense material in the universe (hardness, thermal conductivity, friction coefficient, transparency, etc.) could at last be put to use in a multitude of practical applications. “The holy grail”—it was realized early on—would be the development of large-area, doped, single-crystal diamond wafers for the fabrication of high-temperature, extremely fast integrated circuits leading to a revolution in computer technology.Excitement in the community of chemical-vapor-deposition (CVD) diamond researchers, funding agencies, and industrial companies ran high in expectation of early realization for many of the commercial goals that had been envisioned: tool, optical, and corrosion-resistant coatings; flat-panel displays; thermomanagement for electronic components, etc. Market projection predicting diamond-film sales in the billions of dollars by the year 2000 was commonplace. Hopes were dashed when these optimistic predictions ran up against the enormous scientific and technical problems that had to be overcome in order for those involved to fully exploit the potential of diamond. This experience is not new to the scientific community. One need only remind oneself of the hopes for cheap nuclear power or for high-temperature superconducting wires available at hardware stores to realize that the lag between scientific discoveries and their large-scale applications can be very long. Diamond films are in fact being used today in commercial applications.

Sign in / Sign up

Export Citation Format

Share Document