Heteroepitaxial growth of β-Ga2O3 thin films on c-plane sapphire substrates with β-(AlxGa1-x)2O3 intermediate buffer layer by mist-CVD method

BiFeO3 (BFO) thin films were deposited by pulsed laser deposition (PLD) on c-plane sapphire substrates with a double SrTiO3/TiO2 oxide buffer layer grown by laser molecular beam epitaxy (laser-MBE). X-ray diffraction data showed the highly (111)-oriented perovskite phase in the BFO films with SrTiO3/TiO2 buffer layers, compared to the polycrystalline thin film grown directly on sapphire substrates. The epitaxial BiFeO3 thin films inherit its orientation from the underlying SrTiO3 buffer layer and have two in-plane orientations: (111)[1-10] BiFeO3 // (0001)[1-100] Al2O3 plus a twin variant related by a 180° in-plane rotation. The BiFeO3 thin films with the buffer layer show an out-of-plane remanent polarization of 81.5μC/cm2, which is comparable to the remanent polarization of BiFeO3 prepared on other single crystal substrates. Electrical measurements demonstrate that the BiFeO3 thin films with the buffer layer exhibit excellent fatigue endurance and a low leakage current density relative to the films without the buffer layer. These results indicate that the (111)-oriented BiFeO3 films with favorable electrical performance could be epitaxially grown on sapphire substrates using the double SrTiO3/TiO2 buffer layer.

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Stress reduction and electric properties of InSb thin films grown by metalorganic vapor phase epitaxy on sapphire substrates with an InAs buffer layer

Vacuum ◽

10.1016/j.vacuum.2010.02.012 ◽

2010 ◽

Vol 84 (11) ◽

pp. 1323-1326 ◽

Cited By ~ 5

Author(s):

Shigeo Yamaguchi ◽

Masashi Matsumoto

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Vapor Phase ◽

Stress Reduction ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Electric Properties ◽

Sapphire Substrates ◽

Insb Thin Films

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Heteroepitaxial Growth and Phase Transition Properties of Vanadium Dioxide Thin Films on Different Orientations of Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-672-o8.40 ◽

2001 ◽

Vol 672 ◽

Author(s):

Z.P. Wu ◽

H. Naramoto

Keyword(s):

Thin Films ◽

Vanadium Dioxide ◽

Lattice Mismatch ◽

Crystal Quality ◽

Heteroepitaxial Growth ◽

Epitaxial Relationship ◽

Oriented Growth ◽

Sapphire Substrates ◽

Defect Microstructures ◽

Vanadium Dioxide Thin Films

ABSTRACTVanadium dioxide thin films have been deposited on sapphire substrates with different orientations by pulsed laser ablation. The samples are analyzed by x-ray diffraction and pole figures to determine epitaxial relationship. The crystal quality is evaluated by RBS/Channeling techniques. The results has shown that the growth of VO2 is of strong substrate dependence, the film on (0001) sapphire substrate exhibits better crystal quality than that on (1120) and (0112) sapphire substrates. The epitaxy can be divided into two processes, the first is surface symmetry determined oriented growth, and the second is in-plane oriented growth dominated by the minimization of in-plane lattice mismatch. More over, different substrates result in different defect microstructures, 120o twin is observed in VO2 film on (0001) substrate while 180o on (1120) and no twin on (0112), which also reflects the surface symmetries of the substrates.

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Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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Effects of Buffer-layer Thickness and Active-layer Growth Temperature on ZnO Nanocrystalline Thin Films Grown by Molecular Beam Epitaxy

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2014.52.9.739 ◽

2014 ◽

Vol 52 (9) ◽

pp. 739-744 ◽

Cited By ~ 4

Author(s):

Jae-Young Leem ◽

Byunggu Kim ◽

Giwoong Nam ◽

Youngbin Park ◽

Hyunggil Park

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Layer Thickness ◽

Active Layer ◽

Growth Temperature ◽

Molecular Beam ◽

Layer Growth ◽

Buffer Layer Thickness ◽

Nanocrystalline Thin Films

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High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03001 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03001-1-03001-6 ◽

Cited By ~ 2

Author(s):

Bharat Gabhale ◽

◽

Ashok Jadhawar ◽

Ajinkya Bhorde ◽

Shruthi Nair ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Cvd Method ◽

High Band

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Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.753.505 ◽

2013 ◽

Vol 753 ◽

pp. 505-509

Author(s):

Yuichi Sato ◽

Toshifumi Suzuki ◽

Hiroyuki Mogami ◽

Fumito Otake ◽

Hirotoshi Hatori ◽

...

Keyword(s):

Thin Films ◽

Quartz Glass ◽

Glass Substrate ◽

Solid Phase ◽

Quartz Glass Substrate ◽

Heteroepitaxial Growth ◽

Phase Growth ◽

Single Crystalline ◽

Glass Substrates ◽

Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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