Comprehensive investigation on RF/analog parameters in ferroelectric tunnel FET

In this paper, the effect of ferroelectric layer thickness (tFE), coercive field (Ec), remnant polarization (Pr), and saturation polarization (Ps) on transfer characteristic is highlighted for a Ferroelectric Tunnel FET (Fe-TFET) through a commercial TCAD simulator. Further, we have reported the RF/analog parameters like transconductance (gm), output conductance (gd), gain (gm/gd), gate capacitance (Cgg), and cut off frequency (ft) for wide range of FE parameters in Fe-TFET. Improved RF/analog performance and transfer characteristic are obtained for low value of tFE, Pr, Ec, whereas, these behavior is degraded at high value of Ps.

Design,Simulation And Analysis of Junction Version Multi-Fin FINFET

This paper presents a 3-D statistical simulation study of Multi-fin junction FinFET for different technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their corresponding Electrical parameters like on current (Ion), off current (Ioff), threshold voltage (Vth) are reported in the paper and also RF/Analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd) are reported. And also parameters like Electric field (E), Electron density (ne), Electron mobility (µ) which are measured across the device length are simulated. The proposed structure showed performance improvement in all the parameters when the technology node is decreased.

Design and Performance Analysis of Hybrid SELBOX Junctionless FinFET

In this work, the performance of selective buried oxide junction-less (SELBOX-JL) transistor at a FinFET structure is analysed using numerical simulations. The proposed structure exhibits better thermal resistance (RTH), which is the measure of the self-heating effect (SHE). The DC and analog performances of the proposed structure were studied and compared with the conventional and hybrid (or inverted-T) JLFinFETs (JLTs). The ION of the hybrid SELBOX- JLFinFET is 1.43x times better than the ION of the JLT due to the added advantage of different technologies, such as 2D-ultra-thin-body (UTB), 3D-FinFET, and SELBOX. The proposed device is modeled using sprocess and simulation study is carried using sdevice. Various analog parameters, such as transconductance (gm), transconductance generation factor (TGF = gm/IDS), unity current gain frequency (fT), early voltage (VEA), total gate capacitance (Cgg), and intrinsic gain (A0), are evaluated. The proposed device with a minimum feature size of 10nm exhibited better TGF, fT, VEA, and A0 in the deep-inversion region of operation.

An Ohmic Heating Model Based on the Thermal Circuit Method: Case of Study for Parameter Determination

Currently, ohmic heating is a method with a wide potential as an alternative thermal process in the industry. However, the success of this method depends on the rate of the generated heat by the right material’s selection and its geometry. Due to its complexity, the heating systems are usually modeled by computational fluid dynamics (CFD) or finite element method (FEM). However, in this paper, an alternative model representation was used, and this model does not consider the temperature gradients and uses thermal resistance and capacitance as steady-state and transient analog parameters. The parameters are calculated using matlab considering the geometry, as well as the electrical and thermal properties of the material to heat. The proposed circuit is solved by applying the Laplace transform. Finally, the temperature performance of the model and the experimental system are compared with noncontrolled and controlled experiments.