The Study of Midinfrared Extremely Narrow Dual-Band Absorber Based on a Novel Metamaterial Structure

Due to the problems that the metal pattern layer on the top of the traditional metamaterial structure is easy to be oxidized and easy to fall off, in this paper, a novel semiconductor metamaterial nanostructure composed of a periodic array of GaAs-SiO2 cubes and a gold (Au) film has been proposed. Using FDTD solutions software to prove this metamaterial structure can achieve ultranarrow dual-band, nearly perfect absorption with a maximum absorbance of 99% and a full-width at half-maximum (FWHM) value that is less than 20 nm in the midinfrared region. The refractive index sensitivity is demonstrated by changing the background index and analyzing the absorption performance. It had been proved that this absorber has high sensitivity (2000/RIU and 1300/RIU). Using semiconductor material instead of the metal material of the top pattern layer can effectively inhibit the performance failure of the metamaterial structure caused by metal oxidation. The proposed narrow, dual-band metamaterial absorber shows promising prospects in applications such as infrared detection and imaging.

Assessment Of Cl 2 /CHF 3 Mixture For Plasma Etching Process On Barc And Tin Layer For 0.21 µm Metal Line: Silterra Case Study

In wafer fabrication manufacturing, aluminum etching process is a dry plasma etching process used as main process for construction of aluminum (Al) interconnects structures. As customer requirement changed for faster, more reliable and lower cost chips, chip manufacturers have learned to reduce the size of component on a chip in order to achieve those requirements(Ibrahim, Chik, & Hashim, 2016). As the geometry of the chip getting smaller, the width of Al line wiring specification also shrinking. To print the smaller geometry pattern requirement, the thickness in masking process also has to be reduced for better resolution. Such a thinner resist will create a challenge during plasma etching to ensure a minimal resist loss process which required new type of equipment but this research insist to sustain similar equipment. The use of oxide film as a hard mask has been evaluated by other researchers but alternative approach still needed to suit specific requirement of semiconductor factory installation base. This approach does require a process integration change and require a full technology qualification and easily take a lengthy qualification procedures especially when to qualify the existing products. It is worth trying at the situation of no other solution available. The challenge of insufficient margin for the metal line etching process for 0.2 µm width has caused the deformed metal pattern formation. This chemistry study of Cl2/CHF3 as a replacement gas to existing Cl2/O2 to address Organic backside anti refractive coating (OBARC) was evaluated and proven novelty where detail discussed in the following content.

Fabricating Elastomeric Photomask with Nanosized-Metal Patterns for Near-Field Contact Printing

When an elastomeric photomask is used for near-field contact printing, the high deformability of the elastomer mask plate enables gap-free full contact with the substrate, minimizing the effect of diffraction. This image-transfer technique provides sub-50 nm resolution and depth-of-focus-free lithographic capability with cost-efficient equipment. However, the method’s application is limited due to the lack of a wellestablished protocol for fabricating a nanoscale mask pattern on an elastomeric substrate, which remains a major technical challenge in the field of near-field contact printing. In this study, we present a reliable protocol for fabricating a metal-embedded polydimethylsiloxane (PDMS) photomask. Our fabrication protocol uses conventional nanofabrication processes to fabricate nanosized chromium mask patterns and then transfers the chromium patterns to an elastomeric mask plate using a sacrificial Ni layer. Our protocol provides a high flexibility mask pattern design, and highly stable metal patterns during transferring process. By careful optimizing the experimental parameters, we determined a perfect pattern transfer ratio, which avoided any mechanical failure of the metal pattern, such as debonding or wrinkling. We then fabricated a PDMS photomask and confirmed its nanoscale patterning resolution, with the smallest feature 51 nm in width under a 400-nm light source. We anticipate that our fabrication protocol will enable the application of cost-efficient and high-resolution near-field photolithography.

The Use of Local Raw Materials for the Manufacturing of Import Substitution Casting Products on Investment Casting Technology

The use of local raw materials for the manufacturing of import substitution casting products on investment casting technology has been done. Compared to the conventional casting process, investment casting has the advantage of being able to create a sophisticated casting product and produce a product that is near net shape, so it is no need machining process. The objective is as an effort to find an alternative method of making a quality casting product, has high added value with the utilization of local raw materials which available in Indonesia so that it can reduce the cost of production and dependence on imports of industrial raw materials which are very expensive in the investment casting process. The method of making casting products with investment casting process, including: pattern making, mould making, dewaxing, melting, pouring, finishing and testing. Investment casting technology has been successfully applied to the manufacture of rocker arm, impeller pump and turbine blade with the utilization of local raw materials ie: epoxy resin as a substitute for metal pattern, mixture wax of paraffin, and celo resin for the pattern of wax and zircon sand of Bangka island as coating slurry for ceramic mould. The discussion of this paper is expected to be a case of developing other casting products needed by Indonesia for industry such as: medical equipment, agricultural equipment, textile equipment, gun and small armaments, electronics, automotive and electrical components etc.