scholarly journals Thermoelectric Properties of Cu2SnSe3-SnS Composite

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2040 ◽  
Author(s):  
Muhammad Siyar ◽  
Jun-Young Cho ◽  
Woo-Chan Jin ◽  
Euy Heon Hwang ◽  
Miyoung Kim ◽  
...  

Heavily doped degenerate semiconductors such as Cu2SnSe3 (CTSe) attracted attention in thermoelectric (TE) and optoelectronic fields, due to their high electrical conductivity and small band gap. The small Seebeck coefficient of undoped CTSe, however, is the major issue in achieving high TE performance (figure of merit, ZT). Here, we report that the Seebeck coefficient of CTSe can be controlled by adding SnS within a CTSe matrix. CTSe-SnS composite has not only high Seebeck coefficient in the range of 300–500 µVolt/K but thermal conductivity which is lower than that of pristine CTSe due to the scattering at the interface between the matrix and the SnS particles. A reasonable ZT of 0.18 is achieved at 570 K by adding a small amount (3 wt.%) of SnS to the CTSe matrix.

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mi-kyung Han ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
Mercouri G Kanatzidis

AbstractWe performed comparative investigations of the Ag1-xPb18MTe20 (M = Bi, Sb) (x = 0, 0.14, 0.3) system to better understand the roles of Sb and Bi on the thermoelectric properties. In both systems, the electrical conductivity nearly keeps the same values, while the Seebeck coefficient decreases dramatically in going from Sb to Bi. Compared to the lattice thermal conductivity of PbTe, that of AgPb18BiTe20 is substantially reduced. The lattice thermal conductivity of the Bi analog, however, is higher than that of AgPb18SbTe20 and this is attributed largely to the decrease in the degree of mass fluctuation between the nanostructures and the matrix (for the Bi analog). As a result the dimensionless figure of merit ZT of Ag1-xPb18MTe20 (M = Bi) is found to be smaller than that of Ag1-xPb18MTe20 (M = Sb).


2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1529 ◽  
Author(s):  
Amin Nozariasbmarz ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee

Thermoelectric materials could play a crucial role in the future of wearable electronic devices. They can continuously generate electricity from body heat. For efficient operation in wearable systems, in addition to a high thermoelectric figure of merit, zT, the thermoelectric material must have low thermal conductivity and a high Seebeck coefficient. In this study, we successfully synthesized high-performance nanocomposites of n-type Bi2Te2.7Se0.3, optimized especially for body heat harvesting and power generation applications. Different techniques such as dopant optimization, glass inclusion, microwave radiation in a single mode microwave cavity, and sintering conditions were used to optimize the temperature-dependent thermoelectric properties of Bi2Te2.7Se0.3. The effects of these techniques were studied and compared with each other. A room temperature thermal conductivity as low as 0.65 W/mK and high Seebeck coefficient of −297 μV/K were obtained for a wearable application, while maintaining a high thermoelectric figure of merit, zT, of 0.87 and an average zT of 0.82 over the entire temperature range of 25 °C to 225 °C, which makes the material appropriate for a variety of power generation applications.


Author(s):  
I. Mili ◽  
H. Latelli ◽  
T. Ghellab ◽  
Z. Charifi ◽  
H. Baaziz ◽  
...  

Based on the electronic structure, the physical properties of [Formula: see text] ([Formula: see text], 0.25, 0.5, 0.75, 1) Zintl compounds are studied. The transport properties can be significantly changed by varying the composition [Formula: see text]. The materials under study are more metallic with increasing [Formula: see text] and behaves like a semiconductor when [Formula: see text] decreases. It is found that [Formula: see text] exhibits a larger thermopower magnitude ([Formula: see text] at [Formula: see text] and the Seebeck coefficient decreases as [Formula: see text] increases. The calculated figure of merit factor of [Formula: see text] is found to be low, this is explained by the fact that its structure is very compact and its bandgap is small which lead to high electrical and thermal conductivity due to high carrier concentration ([Formula: see text] at [Formula: see text]). On other hand a narrow-gap (0.46 eV for [Formula: see text]), provides a balance between a high Seebeck coefficient and low electronic thermal conductivity, with a slight increase in the carrier concentration when the temperature increases ([Formula: see text] at 600 K). As a consequence, [Formula: see text] compound is predicted to have good performance for thermoelectric applications. The electrical [Formula: see text] and the thermal [Formula: see text] conductivity for [Formula: see text] compound in both directions (along [Formula: see text] and [Formula: see text]-axes) are calculated. It is obtained that [Formula: see text] is 120% of [Formula: see text] at high-temperature, whereas [Formula: see text] Seebeck coefficient was higher than [Formula: see text] especially at [Formula: see text] ([Formula: see text]. The large value of [Formula: see text] showed that the transport is dominated by zz-axis.


2012 ◽  
Vol 260-261 ◽  
pp. 34-39
Author(s):  
Min Hee Hong ◽  
Chang Sun Park ◽  
Yong June Choi ◽  
Hong Sup Lee ◽  
Hyung Ho Park

The efficiency of a thermoelectric device depends on material properties through the figure of merit, Z = σS2/κ, where σ, S, and κ are electrical conductivity, Seebeck coefficient, and thermal conductivity, respectively. To maximize the thermoelectric figure of merit of a material, high electrical conductivity, high Seebeck coefficient, and low thermal conductivity are required. This work has focused on the synthesis of a mesoporous titania films for its application in thermoelectric generation. The mesoporous titania film was synthesized with titanium tetraisopropoxide. The triblock copolymer, Pluronic P-123 (EO20PO70EO20) was used as surfactant in 1-propanol. As a result, an improvement of electrical conductivity and reduced annealing with a lowering of thermal conductivity by distributions of pores were found to be effective to enhance the thermoelectric property.


2015 ◽  
Vol 112 (48) ◽  
pp. 14777-14782 ◽  
Author(s):  
Jiawei Zhou ◽  
Bolin Liao ◽  
Bo Qiu ◽  
Samuel Huberman ◽  
Keivan Esfarjani ◽  
...  

Although the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect—a coupling phenomenon between electrons and nonequilibrium phonons—in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to ∼0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.


Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3154
Author(s):  
Kony Chatterjee ◽  
Tushar K. Ghosh

Since prehistoric times, textiles have served an important role–providing necessary protection and comfort. Recently, the rise of electronic textiles (e-textiles) as part of the larger efforts to develop smart textiles, has paved the way for enhancing textile functionalities including sensing, energy harvesting, and active heating and cooling. Recent attention has focused on the integration of thermoelectric (TE) functionalities into textiles—making fabrics capable of either converting body heating into electricity (Seebeck effect) or conversely using electricity to provide next-to-skin heating/cooling (Peltier effect). Various TE materials have been explored, classified broadly into (i) inorganic, (ii) organic, and (iii) hybrid organic-inorganic. TE figure-of-merit (ZT) is commonly used to correlate Seebeck coefficient, electrical and thermal conductivity. For textiles, it is important to think of appropriate materials not just in terms of ZT, but also whether they are flexible, conformable, and easily processable. Commercial TEs usually compromise rigid, sometimes toxic, inorganic materials such as bismuth and lead. For textiles, organic and hybrid TE materials are more appropriate. Carbon-based TE materials have been especially attractive since graphene and carbon nanotubes have excellent transport properties with easy modifications to create TE materials with high ZT and textile compatibility. This review focuses on flexible TE materials and their integration into textiles.


2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.


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