Atomic layer deposition of Nb-doped TiO2: Dopant incorporation and effect of annealing

2020 ◽  
Vol 38 (2) ◽  
pp. 022408 ◽  
Author(s):  
Wilhelmus J. H. (Willem-Jan) Berghuis ◽  
Jimmy Melskens ◽  
Bart Macco ◽  
Saravana Balaji Basuvalingam ◽  
Marcel A. Verheijen ◽  
...  
2014 ◽  
Vol 565 ◽  
pp. 19-24 ◽  
Author(s):  
Lauri Aarik ◽  
Tõnis Arroval ◽  
Raul Rammula ◽  
Hugo Mändar ◽  
Väino Sammelselg ◽  
...  

2018 ◽  
Vol 10 (5) ◽  
pp. 779-783 ◽  
Author(s):  
Rizwan Khan ◽  
Kyung Yong Ko ◽  
Jong Seo Park ◽  
Hyungjun Kim ◽  
Han-Bo-Ram Lee

2020 ◽  
Vol 10 (4) ◽  
pp. 1161-1170 ◽  
Author(s):  
Huiyu Yang ◽  
Lisha Zhai ◽  
Ke Li ◽  
Xin Liu ◽  
Bo Deng ◽  
...  

A nano-graphite-doped TiO2 composite, C-TiO2, was fabricated by atomic layer deposition (ALD) of TiO2 onto carbon fiber fabrics (CFFs), followed by calcination.


2011 ◽  
Vol 158 (6) ◽  
pp. B749 ◽  
Author(s):  
Ji-Hwan Choi ◽  
Se-Hun Kwon ◽  
Young-Keun Jeong ◽  
Il Kim ◽  
Kwang-Ho Kim

2017 ◽  
Vol 100 (11) ◽  
pp. 4988-4993 ◽  
Author(s):  
Chung-Yi Su ◽  
Chih-Chieh Wang ◽  
Yang-Chih Hsueh ◽  
Vitaly Gurylev ◽  
Chi-Chung Kei ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1504
Author(s):  
Chia-Hsun Hsu ◽  
Ka-Te Chen ◽  
Ling-Yan Lin ◽  
Wan-Yu Wu ◽  
Lu-Sheng Liang ◽  
...  

Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors. The experimental results show that the Ta incorporation introduces oxygen vacancies defects, accompanied by the reduced crystallinity and optical band gap. The PEALD Ta-doped films show a resistivity three orders of magnitude lower than undoped TiO2, even at a low Ta content (0.8–0.95 at.%). The ultraviolet photoelectron spectroscopy spectra reveal that Ta incorporation leads to a down shift of valance band and conduction positions, and this is helpful for the applications involving band alignment engineering. Finally, the perovskite solar cell with Ta-doped TiO2 electron transport layer demonstrates significantly improved fill factor and conversion efficiency as compared to that with the undoped TiO2 layer.


Sign in / Sign up

Export Citation Format

Share Document