Characterization of silver doped In2S3 films

Silver doped Indium sulphide thin films with different [Ag/In] molar ratio concentrations (0, 0.9, 1.0, 1.1) were deposited on glass substrates using chemical bath deposition method. The structural, morphological, optical and electrical properties are characterized using XRD, EDAX, SEM, AFM, spectrophotometer and Hall measurement system, respectively. Kramers-Kronig method was used to obtain optical constants of the films. It is found that Ag can change physical properties of Indium sulfide thin films, depending on the Ag concentration. XRD results show the incorporation of Ag concentration did not change the structure of In2S3. Doped films had rough surfaces. As the [Ag/In] molar ratio increased, conductivity increases and optical direct band gap energy decreases from 2.75 to 2.38 eV.

Highly efficient energy transfer from a water soluble zinc silver indium sulphide quantum dot to organic J-aggregates

Highly efficient energy transfer from a water soluble quantum dot to organic J-aggregates in an inorganic–organic nanohybrid associate.

Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2S3 facilitates excellent electronic performance.

Influence of halide ions on the structure and properties of copper indium sulphide quantum dots

In the synthesis of CuInS2 quantum dots (QDs), the halide ions present in the copper salts influence the QD growth and optical properties.

Unique Luminescence of Hexagonal Dominant Colloidal Copper Indium Sulphide Quantum Dots in Dispersed Solutions

Luminescent hexagonal dominant copper indium sulphide (h-dominant CIS) quantum dots (QDs) by precursor-injection of mixed metal-dialkyldithiocarbamate precursors. Owing to the different reactivity of the precursors, this method allowed the CIS QDs to grow while retaining the crystallinity of the hexagonal nucleus. The photoluminescence (PL) spectra exhibited dual emission (600–700 nm red emission and 700–800 nm NIR emission) resulting from the combined contributions of the hexagonal (wurtzite) h-CIS and tetragonal (chalcopyrite) t-CIS QDs, i.e. the NIR and red emissions were due to the h-CIS QDs and coexisting t-CIS QDs (weight ratio of h-CIS/t-CIS ~ 10), respectively. The PL intensities of the h-CIS as well as t-CIS QDs were enhanced by post-synthetic heat treatment; the t-CIS QDs were particularly sensitive to the heat treatment. By separating h-CIS and t-CIS successfully, it was demonstrated that this phenomenon was not affected by size and composition but by the donor-acceptor pair states and defect concentration originating from their crystal structure. The h-dominant CIS QDs in this work provide a new technique to control the optical property of Cu-In-S ternary NCs.