Formation of Cu(In,Ga)S2 chalcopyrite thin films following a 3-stage co-evaporation process

2022 ◽  
Vol 237 ◽  
pp. 111563
Author(s):  
A. Thomere ◽  
N. Barreau ◽  
N. Stephant ◽  
C. Guillot-Deudon ◽  
E. Gautron ◽  
...  
Keyword(s):  
Thin Films ◽  
Evaporation Process

Impact of Se flux on the defect formation in polycrystalline Cu(In,Ga)Se2 thin films grown by three stage evaporation process

2013 ◽  
Vol 113 (6) ◽  
pp. 064907 ◽  
Author(s):  
M. M. Islam ◽  
A. Uedono ◽  
T. Sakurai ◽  
A. Yamada ◽  
S. Ishizuka ◽  
...  
Keyword(s):  
Thin Films ◽  
Defect Formation ◽  
Evaporation Process

In-SituX-Ray Observation of Molecular Structure in Organic Thin Films during Evaporation Process by Total Reflection In-Plane X-Ray Diffractometer

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 4081-4085 ◽  
Author(s):  
Kouichi Hayashi ◽  
Kenji Ishida ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige
Keyword(s):  
Molecular Structure ◽  
Thin Films ◽  
Organic Thin Films ◽  
Total Reflection ◽  
Evaporation Process ◽  
X Ray

The Future of Sputtering in the Electron Microscope Laboratory

1973 ◽  
Vol 31 ◽  
pp. 82-83
Author(s):  
G. G. Paulson ◽  
R. E. Ferrell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Thermal Evaporation ◽  
Good Control ◽  
Dielectric Materials ◽  
Refractory Metals ◽  
Evaporation Process ◽  
The Future

In such fields as electronics and optics, the sputtering process is rapidly displacing the conventional evaporation process. Its major advantage is the ability to deposit a variety of refractory metals and dielectric materials with good control and reproducibility. This advantage and numerous others are valid reasons why sputtering may eventually displace thermal evaporation in the typical electron microscope laboratory. Sputtering is readily adapted to the procedures utilized in TEM, however, the following discussion highlights the advantages of sputtering for applying coatings to specimens for SEM.Sputtering is not a new concept. Numerous papers and books had been published before 1900 concerning the use of sputtering for depositing thin films.

Effect of bulk and surface modification of SnO2 thin films with PdO catalyst on CO gas sensing characteristics prepared by vacuum evaporation process

2020 ◽  
Vol 843 ◽  
pp. 155979 ◽  
Author(s):  
Amit Kumar Mauraya ◽  
Debashrita Mahana ◽  
Prabir Pal ◽  
Saravanan Muthiah ◽  
Preetam Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Gas Sensing ◽  
Vacuum Evaporation ◽  
Evaporation Process ◽  
Sno2 Thin Films ◽  
Sensing Characteristics ◽  
Co Gas

The effects of Na on the growth of Cu2ZnSnSe4 thin films using low-temperature evaporation process

2019 ◽  
Vol 15 (2) ◽  
pp. 132-134
Author(s):  
Ding Sun ◽  
Yu-li Li ◽  
Yu-hong Zhang ◽  
Xiu-juan Guo ◽  
Li Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Evaporation Process

Theoretical Aspects on Spatial Thickness Variations in Laser-Deposited Thin Films.

1991 ◽  
Vol 236 ◽  
Author(s):  
Rajiv K. Singh ◽  
James Carignan
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Plasma Temperature ◽  
Pulsed Laser Ablation ◽  
Laser Wavelength ◽  
Evaporation Process ◽  
Anisotropic Expansion ◽  
Thickness Variations ◽  
Deposited Films ◽  
Laser Ablation Technique

AbstractWe have studied predicted thickness uniformity of thin films deposited by the pulsed laser ablation technique. Unlike a conventional evaporation process, the spatial thickness characteristics of laser-deposited films is controlled by a number of laser and other deposition variables including laser wavelength, pulse energy density, substrate-target distance, area and shape of the laser irradiated spot, etc. The effect of these parameters on the spatial thickness variations have been analyzed by using a model proposed by Singh et. al. [1]. This model is based on the anisotropic expansion of the laser-generated high-temperature and high-pressure plasma, which is initially confined to small dimensions and then expands anisotropically in vacuum. The results show that spatial film uniformity can be improved by decreasing plasma temperature and specific heat capacity ratio of the plasma gas. For large laser irradiated spot diameters (> 8 mm), the film uniformity was found to decrease with decreasing spot diameters, but this trend reversed at smaller: irradiated spot sizes. Depending on the laser irradiated conditions and substrate-target geometry, the thickness variations have been found to vary from (cos θ)2.5 to (cos θ)12. Optimization of various parameters to decrease the spatial-thickness inhomogeneities across the film are also discussed.

scholarly journals Preparation of High Ga Content Cu(In,Ga)Se<sub>2</sub> Thin Films by Sequential Evaporation Process Added In<sub>2</sub>S<sub>3</sub>

2012 ◽  
Vol 02 (04) ◽  
pp. 106-109
Author(s):  
Toshiyuki Yamaguchi ◽  
Kazuma Tsujita ◽  
Shigetoshi Niiyama ◽  
Toshito Imanishi
Keyword(s):  
Thin Films ◽  
Evaporation Process ◽  
Ga Content
Sign in / Sign up

Export Citation Format

Share Document