scholarly journals PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD

2018 ◽  
pp. 51-59
Author(s):  
Alexander A. Danilenko ◽  
Anton V. Strygin ◽  
Nikolay I. Mikhailov ◽  
Vadim V. Perepelovsky ◽  
Yaroslav N. Panichev ◽  
...  
Keyword(s):  
Model Simulation ◽  
Floating Gate ◽  
Physical Models ◽  
Pin Diode ◽  
Floating Gates ◽  
Complex Simulation ◽  
Gate Structure ◽  
Accumulation Mechanism ◽  
Structure Programming ◽  
Concentration Of Electrons

The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.

Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure

2004 ◽  
Vol 338-340 ◽  
pp. 318-321 ◽  
Author(s):  
Liangcai Wu ◽  
Min Dai ◽  
Xinfan Huang ◽  
Yongjun Zhang ◽  
Wei Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Tunneling ◽  
Nanocrystalline Silicon ◽  
Floating Gate ◽  
Gate Structure ◽  
Temperature Electron ◽  
And Storage

A direct tunneling memory using ultra-thin oxide and deca-nano floating gate structure

2000 ◽  
Vol 28 (5-6) ◽  
pp. 401-406
Author(s):  
Tatsuya Usuki ◽  
Naoto Horiguchi ◽  
Kenichi Goto ◽  
Takuji Tanaka ◽  
Toshiro Futatsugi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Direct Tunneling ◽  
Gate Structure ◽  
Thin Oxide

Low Activation Energy by Polarization in a Floating Gate Structure

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1506-L1508 ◽  
Author(s):  
Hiroshi Nozawa ◽  
Keikichi Tamaru
Keyword(s):  
Activation Energy ◽  
Floating Gate ◽  
Gate Structure

scholarly journals Hydraulic Performance for Combined Weir-Gate Structure

2020 ◽  
Vol 27 (1) ◽  
pp. 40-50
Author(s):  
Bshkoj Hussein ◽  
Shaker Jalil
Keyword(s):  
Water Surface ◽  
Hydraulic Structure ◽  
Fluid Dynamic ◽  
Physical Models ◽  
Percentage Increase ◽  
Combined System ◽  
Average Percentage ◽  
Gate Structure ◽  
Surface Profiles ◽  
Computational Fluid Dynamic Software

Combined hydraulic structure play an important role in controlling flow in open channels. This study was based on experimental and numerical modeling investigations for combined hydraulic structure. For this purpose three physical models of combined sharp crested trapezoidal weir with bottom opening and one physical model of sharp crested trapezoidal weir separately were used and tested by running eight different flow rates over each model. In which three configurations of bottom opening were tested; the first configuration is a rectangular gate while other two configuration were trapezoidal with two different side slopes of (1V:4H) and (1V:2H). The water surface profiles passing through weir-gate system were measured for all thirty two runs of all models which show uniform flow at 2.11h from the upstream of weir. The commercial computational fluid dynamic software ANSYS CFX was used to simulate flow numerically. The verification of the numerical model was based on water surface profiles and discharge which showed acceptable agreement. Also, the results showed that discharge coefficient Cd varies from (0.52-0.58). Furthermore, it was shown that both models with trapezoidal gate pass a higher discharge of flow than the model with rectangular gate with average percentage increase of discharge (40.78% and 19.40%) for trapezoidal side slopes (1H:2V and 1H:4V) respectively. In addition, the combined system with milder trapezoidal side slopes of bottom opening had a better performance for discharging weir flow which is about 40% as compared with traditional one. Finally, the empirical equations for stage-discharge relationship were estimated for all models and discharge coefficients were estimated for all runs.

Fowler--Nordheim Tunneling at Sharp-Shaped Floating Gate Structure Modeled as Triangular Electrode

2019 ◽  
Vol 7 (4) ◽  
pp. 79-82
Author(s):  
Gilang Mardian Kartiwa ◽  
◽  
Muhammad Amin Sulthoni ◽  
Fatimah Arofiati Noor
Keyword(s):  
Floating Gate ◽  
Gate Structure ◽  
Nordheim Tunneling

Utilization Mathematical and Physical Models Derived Therefrom Real-Time Models for the Optimization of Heating Processes

2013 ◽  
Vol 58 (3) ◽  
pp. 981-985 ◽  
Author(s):  
I. Špička ◽  
M. Heger
Keyword(s):  
Mathematical Models ◽  
Real Time ◽  
Model Simulation ◽  
Optimization Algorithms ◽  
Physical Models ◽  
Simplified Model ◽  
Operating Data ◽  
Reheating Furnace ◽  
Accurate Model ◽  
Computationally Intensive

Abstract Heating of materials is energy and costly operations. On those reasons optimization is highly desirable. One of the possible solutions to optimize heating in real time is to use a large number of fast simulations on the basis of them the optimization algorithms have chosen the most appropriate option of the heating control. This solution implies the use of extremely fast but sufficiently accurate simplified mathematical models of heating, the structure and parameters of them are defined based on accurate modelling using computationally intensive but slower classical mathematical-physical models. Based on the operating data of the reheating furnace was build an accurate model of heating. Using the simplified model simulation of heating was done with different heating conditions with downtime during heating. Proposed algorithms including the simulations show that the proposed strategy leads to verifiable savings during heating.

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