Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to AIN:[AI(CH3)2NH2]3

1989 ◽  
Vol 168 ◽  
Author(s):  
Carmela C. Amato ◽  
John B. Hudson ◽  
Leonard V. Interrante
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Phase Decomposition ◽  
Novel Technique ◽  
Organometallic Precursor ◽  
Chemical Vapor Deposition Reaction

AbstractA novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organometallic precursor to AIN, [AI(CH3)2NH2]3, indicate a decomposition temperature between 200 and 270°C. The mass spectrum of the precursor at 100°C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Similar Process ◽  
Process Conditions ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

AbstractSilane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to Ain: [A1(CH3)2NH2]3

1990 ◽  
Vol 204 ◽  
Author(s):  
Carmela C. Amato ◽  
John B. Hudson ◽  
Leonard V. Interrante
Keyword(s):  
Gas Phase ◽  
Mass Spectra ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Mass Spectral ◽  
Organometallic Precursor ◽  
Deuterated Analogue ◽  
Precursor Decomposition ◽  
Reactor Temperature

ABSTRACTA CVD reactor has been coupled to a molecular beam apparatus in order to study the gas phase decomposition of an organometallic precursor to AIN, tris-dimethylaluminum amide, [(CH3)2AINH2]3. The onset of decomposition occurs at a reactor temperature of 125°C. By 300°C, all mass spectral signals due to precursor have disappeared. With the addition of helium as a carrier gas in the CVD process, the temperature at which all precursor signals disappear is raised to 400°C. The evolution of methane accompanies the precursor decomposition. Mass spectra of the precursor and its deuterated analogue, [(CH3)2 AIND2]3, obtained between 50°C and 90°C, offer support for the existence of trimer-dimer-monomer equilibria in this temperature range.

scholarly journals Development of Analysing System for Chemical Vapor Deposition Reaction Mechanism Using Molecular Beam Sampling Method. (2).

Shinku ◽  
1995 ◽  
Vol 38 (5) ◽  
pp. 516-519 ◽  
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehito USUI ◽  
Jun'ichi KOBAYASHI ◽  
Kazunori WATANABE
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Sampling Method ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reaction

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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