Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

2002 ◽  
Author(s):  
K.M. Klein ◽  
C. Park ◽  
S.-H. Yang ◽  
A.F. Tasch
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Crystal Silicon ◽  
Dimensional Modeling ◽  
Boron Implantation

A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
K. M. Klein ◽  
C. Park ◽  
S. Yang ◽  
S. Morris ◽  
V. Do ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
New Model ◽  
Two Dimensional Model ◽  
Boron Implantation ◽  
Angle Rotation

ABSTRACTWe have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.

Two-Dimensional Photonic Crystals Fabricated in Monolithic Single-Crystal Silicon

2010 ◽  
Vol 22 (2) ◽  
pp. 67-69 ◽  
Author(s):  
Sanja Hadzialic ◽  
Sora Kim ◽  
Aasmund Sveinung Sudbo ◽  
Olav Solgaard
Keyword(s):  
Photonic Crystals ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Crystal Silicon

A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
Steven J. Morris ◽  
Shyh-Horng Yang ◽  
David H. Lim ◽  
AL. F. Tasch
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
Two Dimensional Model ◽  
D Model ◽  
Energy Dose

ABSTRACTIn this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.

Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

1995 ◽  
Vol 396 ◽  
Author(s):  
S. Morris ◽  
D. Lim ◽  
S.-H. Yang ◽  
S. Tian ◽  
K. Parab ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Oxide Layer Thickness ◽  
Two Dimensional ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
Oxide Layers ◽  
Boron Implantation ◽  
D Model ◽  
Process Simulator ◽  
Mask Edge

AbstractA 2-D model for boron implantation into (100) silicon through overlying oxide layers has been developed and implemented into the process simulator FLOOPS. This model is both accurate and computationally efficient and shows explicit dependencies on all of the key implant parameters: energy, dose, tilt and rotation angles, oxide layer thickness, mask height, mask edge orientation, and rotation of the wafer during implantation.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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