scholarly journals Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors

2017 ◽  
Vol 27 (19) ◽  
pp. 1604093 ◽  
Author(s):  
Zhihao Yu ◽  
Zhun-Yong Ong ◽  
Songlin Li ◽  
Jian-Bin Xu ◽  
Gang Zhang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Carrier Mobility ◽  
Transition Metal Dichalcogenide

A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers

2018 ◽  
Vol 6 (18) ◽  
pp. 8693-8704 ◽  
Author(s):  
Ashima Rawat ◽  
Nityasagar Jena ◽  
Dimple Dimple ◽  
Abir De Sarkar
Keyword(s):  
Transition Metal ◽  
Carrier Mobility ◽  
Artificial Photosynthesis ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Artificial Photosynthetic ◽  
Photosynthetic Properties ◽  
Comprehensive Study

Artificial photosynthesis in group VI B transition metal dichalcogenide monolayers.

Modification of thermal transport in few-layer MoS2 by atomic-level defects engineering

Nanoscale ◽  
2021 ◽  
Author(s):  
Yunshan Zhao ◽  
Minrui Zheng ◽  
Jing Wu ◽  
Xin Guan ◽  
Ady Suwardi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Charge Carrier ◽  
Molybdenum Disulfide ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Atomic Level ◽  
Transition Metal Dichalcogenide ◽  
Significant Attention

Molybdenum disulfide (MoS2), as a representative transition metal dichalcogenide (TMDC), has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent...

scholarly journals Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Weak Disorder

scholarly journals Angle Dependence of Interlayer Coupling in Twisted Transition Metal Dichalcogenide Heterobilayers

2020 ◽  
Author(s):  
W. T. Geng ◽  
V. Wang ◽  
J. B. Lin ◽  
T. Ohno ◽  
J. Nara
Keyword(s):  
Transition Metal ◽  
Interlayer Coupling ◽  
Transition Metal Dichalcogenide ◽  
Angle Dependence

Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  
Keyword(s):  
Transition Metal ◽  
Point Defects ◽  
Transition Metal Dichalcogenide

scholarly journals Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos
Keyword(s):  
Dielectric Constant ◽  
Transition Metal ◽  
Harmonic Generation ◽  
Nonlinear Effect ◽  
Second Harmonic ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Dichalcogenides ◽  
Epsilon Near Zero

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.

scholarly journals Epitaxial Single‐Crystal Growth of Transition Metal Dichalcogenide Monolayers via the Atomic Sawtooth Au Surface

2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Transition Metal ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Transition Metal Dichalcogenide

Weak Kondo effect in the monocrystalline transition metal dichalcogenide ZrTe2

2021 ◽  
Vol 103 (17) ◽  
Author(s):  
Yihao Wang ◽  
Changzheng Xie ◽  
Junbo Li ◽  
Zan Du ◽  
Liang Cao ◽  
...  
Keyword(s):  
Transition Metal ◽  
Kondo Effect ◽  
Transition Metal Dichalcogenide

scholarly journals Flat-band topology of magic angle graphene on a transition metal dichalcogenide

2020 ◽  
Vol 102 (23) ◽  
Author(s):  
Tianle Wang ◽  
Nick Bultinck ◽  
Michael P. Zaletel
Keyword(s):  
Transition Metal ◽  
Flat Band ◽  
Magic Angle ◽  
Transition Metal Dichalcogenide

scholarly journals Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Daniil Marinov ◽  
Jean-François de Marneffe ◽  
Quentin Smets ◽  
Goutham Arutchelvan ◽  
Kristof M. Bal ◽  
...  
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Field Effect Transistors ◽  
Removal Rate ◽  
2D Materials ◽  
Scale Up ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Plasma Cleaning ◽  
Transition Metal Dichalcogenide

AbstractThe cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.

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