A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers

The valence band maxima of most group VI transition metal dichalcogenide thin films remain at the Γ point all of the way from bulk to bilayer. In this paper, we develop a continuum theory of the moiré minibands that are formed in the valence bands of Γ-valley homobilayers by a small relative twist. Our effective theory is benchmarked against large-scale ab initio electronic structure calculations that account for lattice relaxation. As a consequence of an emergent D6 symmetry, we find that low-energy Γ-valley moiré holes differ qualitatively from their K-valley counterparts addressed previously; in energetic order, the first three bands realize 1) a single-orbital model on a honeycomb lattice, 2) a two-orbital model on a honeycomb lattice, and 3) a single-orbital model on a kagome lattice.

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Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors

RSC Advances ◽

10.1039/c9ra03769a ◽

2019 ◽

Vol 9 (44) ◽

pp. 25439-25461 ◽

Cited By ~ 8

Author(s):

Bhaskar Kaviraj ◽

Dhirendra Sahoo

Keyword(s):

Transition Metal ◽

Band Gaps ◽

Transition Metal Dichalcogenide ◽

Two Dimensional ◽

Group Vi ◽

Strong Light ◽

Matter Coupling ◽

Infrared Spectral ◽

Direct Band

Two-dimensional (2D) group-VI transition metal dichalcogenide (TMD) semiconductors, such as MoS2, MoSe2, WS2 and others manifest strong light matter coupling and exhibit direct band gaps which lie in the visible and infrared spectral regimes.

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Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition

Journal of Materials Research ◽

10.1557/jmr.2007.0179 ◽

2007 ◽

Vol 22 (5) ◽

pp. 1390-1395 ◽

Cited By ~ 8

Author(s):

Wooseok Ki ◽

Xiaoying Huang ◽

Jing Li ◽

David L. Young ◽

Yong Zhang

Keyword(s):

Thin Films ◽

Transition Metal ◽

Room Temperature ◽

Inert Atmosphere ◽

Transition Metal Dichalcogenide ◽

Group Vi ◽

Solution Processed ◽

Temperature Conductivity ◽

Structure Transition ◽

Room Temperature Conductivity

A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical absorption, thermal, and transport properties of the thin films were characterized. Surface morphology of the films was analyzed by atomic force microscopy and scanning electron microscopy. Highly conductive and textured n-type MoS2 films were obtained. The measured room temperature conductivity ∼50 Ω−1 cm−1 is substantially higher than the previously reported values. The n-type WS2 films were prepared for the first time using solution-processed deposition. WS2 displays a conductivity of ∼6.7 Ω−1 cm−1 at room temperature.

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Modification of thermal transport in few-layer MoS2 by atomic-level defects engineering

Nanoscale ◽

10.1039/d1nr01832a ◽

2021 ◽

Author(s):

Yunshan Zhao ◽

Minrui Zheng ◽

Jing Wu ◽

Xin Guan ◽

Ady Suwardi ◽

...

Keyword(s):

Transition Metal ◽

Charge Carrier ◽

Molybdenum Disulfide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Atomic Level ◽

Transition Metal Dichalcogenide ◽

Significant Attention

Molybdenum disulfide (MoS2), as a representative transition metal dichalcogenide (TMDC), has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent...

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Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Nano Letters ◽

10.1021/acs.nanolett.0c01288 ◽

2020 ◽

Vol 20 (7) ◽

pp. 5111-5118 ◽

Cited By ~ 8

Author(s):

Carmen Rubio-Verdú ◽

Antonio M. Garcı́a-Garcı́a ◽

Hyejin Ryu ◽

Deung-Jang Choi ◽

Javier Zaldı́var ◽

...

Keyword(s):

Transition Metal ◽

Transition Metal Dichalcogenide ◽

Two Dimensional ◽

Weak Disorder

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Angle Dependence of Interlayer Coupling in Twisted Transition Metal Dichalcogenide Heterobilayers

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.0c09372 ◽

2020 ◽

Author(s):

W. T. Geng ◽

V. Wang ◽

J. B. Lin ◽

T. Ohno ◽

J. Nara

Keyword(s):

Transition Metal ◽

Interlayer Coupling ◽

Transition Metal Dichalcogenide ◽

Angle Dependence

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Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants

Nano Letters ◽

10.1021/acs.nanolett.0c05135 ◽

2021 ◽

Vol 21 (8) ◽

pp. 3341-3354

Author(s):

Seung-Young Seo ◽

Dong-Hwan Yang ◽

Gunho Moon ◽

Odongo F. N. Okello ◽

Min Yeong Park ◽

...

Keyword(s):

Transition Metal ◽

Point Defects ◽

Transition Metal Dichalcogenide

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Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate

Nanoscale Advances ◽

10.1039/d0na00779j ◽

2021 ◽

Vol 3 (1) ◽

pp. 272-278

Author(s):

Pilar G. Vianna ◽

Aline dos S. Almeida ◽

Rodrigo M. Gerosa ◽

Dario A. Bahamon ◽

Christiano J. S. de Matos

Keyword(s):

Dielectric Constant ◽

Transition Metal ◽

Harmonic Generation ◽

Nonlinear Effect ◽

Second Harmonic ◽

2D Materials ◽

Transition Metal Dichalcogenides ◽

Transition Metal Dichalcogenide ◽

Metal Dichalcogenides ◽

Epsilon Near Zero

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.

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