A comprehensive study on carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers

2018 ◽  
Vol 6 (18) ◽  
pp. 8693-8704 ◽  
Author(s):  
Ashima Rawat ◽  
Nityasagar Jena ◽  
Dimple Dimple ◽  
Abir De Sarkar
Keyword(s):  
Transition Metal ◽  
Carrier Mobility ◽  
Artificial Photosynthesis ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Artificial Photosynthetic ◽  
Photosynthetic Properties ◽  
Comprehensive Study

Artificial photosynthesis in group VI B transition metal dichalcogenide monolayers.

Chalcogen-vacancy group VI transition metal dichalcogenide nanosheets for electrochemical and photoelectrochemical hydrogen evolution

2021 ◽  
Vol 9 (1) ◽  
pp. 101-109
Author(s):  
In Hye Kwak ◽  
Ik Seon Kwon ◽  
Jong Hyun Lee ◽  
Young Rok Lim ◽  
Jeunghee Park
Keyword(s):  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Photoelectrochemical Cells ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Catalytic Hydrogen ◽  
Catalytic Hydrogen Evolution

Chalcogen vacancies of MoS2, MoSe2, WS2, and WSe2 nanosheets enhanced the catalytic hydrogen evolution reaction in solar photoelectrochemical cells.

scholarly journals Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors

2017 ◽  
Vol 27 (19) ◽  
pp. 1604093 ◽  
Author(s):  
Zhihao Yu ◽  
Zhun-Yong Ong ◽  
Songlin Li ◽  
Jian-Bin Xu ◽  
Gang Zhang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Carrier Mobility ◽  
Transition Metal Dichalcogenide

scholarly journals Γ valley transition metal dichalcogenide moiré bands

2021 ◽  
Vol 118 (10) ◽  
pp. e2021826118
Author(s):  
Mattia Angeli ◽  
Allan H. MacDonald
Keyword(s):  
Transition Metal ◽  
Large Scale ◽  
Continuum Theory ◽  
Lattice Relaxation ◽  
Effective Theory ◽  
Honeycomb Lattice ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Valence Bands ◽  
Structure Calculations

The valence band maxima of most group VI transition metal dichalcogenide thin films remain at the Γ point all of the way from bulk to bilayer. In this paper, we develop a continuum theory of the moiré minibands that are formed in the valence bands of Γ-valley homobilayers by a small relative twist. Our effective theory is benchmarked against large-scale ab initio electronic structure calculations that account for lattice relaxation. As a consequence of an emergent D6 symmetry, we find that low-energy Γ-valley moiré holes differ qualitatively from their K-valley counterparts addressed previously; in energetic order, the first three bands realize 1) a single-orbital model on a honeycomb lattice, 2) a two-orbital model on a honeycomb lattice, and 3) a single-orbital model on a kagome lattice.

scholarly journals Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors

RSC Advances ◽  
2019 ◽  
Vol 9 (44) ◽  
pp. 25439-25461 ◽  
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo
Keyword(s):  
Transition Metal ◽  
Band Gaps ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Group Vi ◽  
Strong Light ◽  
Matter Coupling ◽  
Infrared Spectral ◽  
Direct Band

Two-dimensional (2D) group-VI transition metal dichalcogenide (TMD) semiconductors, such as MoS2, MoSe2, WS2 and others manifest strong light matter coupling and exhibit direct band gaps which lie in the visible and infrared spectral regimes.

Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition

2007 ◽  
Vol 22 (5) ◽  
pp. 1390-1395 ◽  
Author(s):  
Wooseok Ki ◽  
Xiaoying Huang ◽  
Jing Li ◽  
David L. Young ◽  
Yong Zhang
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature ◽  
Inert Atmosphere ◽  
Transition Metal Dichalcogenide ◽  
Group Vi ◽  
Solution Processed ◽  
Temperature Conductivity ◽  
Structure Transition ◽  
Room Temperature Conductivity

A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical absorption, thermal, and transport properties of the thin films were characterized. Surface morphology of the films was analyzed by atomic force microscopy and scanning electron microscopy. Highly conductive and textured n-type MoS2 films were obtained. The measured room temperature conductivity ∼50 Ω−1 cm−1 is substantially higher than the previously reported values. The n-type WS2 films were prepared for the first time using solution-processed deposition. WS2 displays a conductivity of ∼6.7 Ω−1 cm−1 at room temperature.

Modification of thermal transport in few-layer MoS2 by atomic-level defects engineering

Nanoscale ◽  
2021 ◽  
Author(s):  
Yunshan Zhao ◽  
Minrui Zheng ◽  
Jing Wu ◽  
Xin Guan ◽  
Ady Suwardi ◽  
...  
Keyword(s):  
Transition Metal ◽  
Charge Carrier ◽  
Molybdenum Disulfide ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Atomic Level ◽  
Transition Metal Dichalcogenide ◽  
Significant Attention

Molybdenum disulfide (MoS2), as a representative transition metal dichalcogenide (TMDC), has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent...

scholarly journals Visualization of Multifractal Superconductivity in a Two-Dimensional Transition Metal Dichalcogenide in the Weak-Disorder Regime

Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Weak Disorder

Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  
Keyword(s):  
Transition Metal ◽  
Point Defects ◽  
Transition Metal Dichalcogenide

scholarly journals Second-harmonic generation enhancement in monolayer transition-metal dichalcogenides by using an epsilon-near-zero substrate

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos
Keyword(s):  
Dielectric Constant ◽  
Transition Metal ◽  
Harmonic Generation ◽  
Nonlinear Effect ◽  
Second Harmonic ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Metal Dichalcogenides ◽  
Epsilon Near Zero

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.

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