scholarly journals Porous Silicon Nanostructures as Effective Faradaic Electrochemical Sensing Platforms

2019 ◽  
Vol 29 (24) ◽  
pp. 1809206 ◽  
Author(s):  
Keying Guo ◽  
Apoorva Sharma ◽  
Rou Jun Toh ◽  
Eva Alvárez de Eulate ◽  
Thomas R. Gengenbach ◽  
...  
2009 ◽  
Vol 94 (13) ◽  
pp. 133103 ◽  
Author(s):  
J. Escorcia-Garcia ◽  
V. Agarwal ◽  
P. Parmananda

2017 ◽  
Vol 100 (4) ◽  
pp. 950-961 ◽  
Author(s):  
María Pedrero ◽  
Susana Campuzano ◽  
José M Pingarrón

Abstract The determination of organic and inorganic environmental and food pollutants is a key matter of concern in analytical chemistry due to their effects as a serious threat to human health. Focusing on this issue, several methodologies involving the use of nanostructured electrochemical platforms have been recently reported in the literature. Among these methods, those employing the use of quantum dots (QDs) stand out because of features such as signal amplification, good reproducibility and selectivity, and the possibility for multiplexed detection, and because they preserve the outstanding characteristics of electrochemical methodologies with respect to simplicity, ease-of-use, and cost-effective instrumentation. This review describes recent electrochemical strategies, in which design QDs play a key role, for the determination of pollutants in food and environmental samples. The particular role of QDs in the reported methodologies, their preparation, and the electrochemical platform design, as well as the advantages that QDs provide in the analysis of target analytes, are critically discussed.


2008 ◽  
Vol 112 (42) ◽  
pp. 16622-16628 ◽  
Author(s):  
Alain Petit ◽  
Michel Delmotte ◽  
André Loupy ◽  
Jean-Noël Chazalviel ◽  
François Ozanam ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).


2017 ◽  
Vol 257 ◽  
pp. 51-59 ◽  
Author(s):  
Neta Zilony ◽  
Michal Rosenberg ◽  
Liran Holtzman ◽  
Hadas Schori ◽  
Orit Shefi ◽  
...  

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.


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