scholarly journals Field‐Effect Transistors: Field‐Effect Transistors on Photonic Cellulose Nanocrystal Solid Electrolyte for Circular Polarized Light Sensing (Adv. Funct. Mater. 21/2019)

2019 ◽  
Vol 29 (21) ◽  
pp. 1970145
Author(s):  
Paul Grey ◽  
Susete N. Fernandes ◽  
Diana Gaspar ◽  
Elvira Fortunato ◽  
Rodrigo Martins ◽  
...  
2018 ◽  
Vol 29 (21) ◽  
pp. 1805279 ◽  
Author(s):  
Paul Grey ◽  
Susete N. Fernandes ◽  
Diana Gaspar ◽  
Elvira Fortunato ◽  
Rodrigo Martins ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.


2015 ◽  
Vol 7 (8) ◽  
pp. 4804-4808 ◽  
Author(s):  
Cheng-Yin Wang ◽  
Canek Fuentes-Hernandez ◽  
Jen-Chieh Liu ◽  
Amir Dindar ◽  
Sangmoo Choi ◽  
...  

2021 ◽  
pp. 2001731
Author(s):  
Paul Grey ◽  
Manuel Chapa ◽  
Miguel Alexandre ◽  
Tiago Mateus ◽  
Elvira Fortunato ◽  
...  

2016 ◽  
Vol 4 (1) ◽  
pp. 150-156 ◽  
Author(s):  
Xiaotao Hu ◽  
Jia Sun ◽  
Chuan Qian ◽  
Fangmei Liu ◽  
Junliang Yang ◽  
...  

We report on solid-electrolyte-gated FETs with ferromagnetic contacts that result in a decrease in contact resistance and assess their potential for spintronics.


2010 ◽  
Vol 20 (16) ◽  
pp. 2605-2610 ◽  
Author(s):  
Nikolai Kaihovirta ◽  
Harri Aarnio ◽  
Carl-Johan Wikman ◽  
Carl-Eric Wilén ◽  
Ronald Österbacka

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