Antisite Defects Stabilized by Antiphase Boundaries in YFeO 3 Thin Films

A novel mosaic-like structure in SrTiO3 thin films was discovered and characterized by means of transmission electron microscopy (TEM). The films were deposited on a (001) oriented Pt surface. The orientation relationship between SrTiO3 film and Pt substrate was determined, and four types of growth modes were revealed. These four growth modes formed four types of domains, respectively, and these domains and Pt formed peculiarly ordered interfacial structures, i.e., near coincidence site lattices. Antiphase boundaries between two adjacent domains were also observed by high-resolution imaging.

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Antiphase boundaries induced exchange coupling in epitaxial Fe3O4 thin films

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2004.09.066 ◽

2005 ◽

Vol 286 ◽

pp. 463-467 ◽

Cited By ~ 37

Author(s):

S.K. Arora ◽

R.G.S. Sofin ◽

A. Nolan ◽

I.V. Shvets

Keyword(s):

Thin Films ◽

Exchange Coupling ◽

Antiphase Boundaries

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Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries

Nanoscale Research Letters ◽

10.1186/s11671-015-1116-8 ◽

2015 ◽

Vol 10 (1) ◽

Cited By ~ 9

Author(s):

I MacLaren ◽

B Sala ◽

S M L Andersson ◽

T J Pennycook ◽

J Xiong ◽

...

Keyword(s):

Thin Films ◽

Strain Localization ◽

Antiphase Boundaries

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Antisite defects of Bi2Te3 thin films

Applied Physics Letters ◽

10.1063/1.124707 ◽

1999 ◽

Vol 75 (10) ◽

pp. 1401-1403 ◽

Cited By ~ 121

Author(s):

Sunglae Cho ◽

Yunki Kim ◽

Antonio DiVenere ◽

George K. Wong ◽

John B. Ketterson ◽

...

Keyword(s):

Thin Films ◽

Antisite Defects

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Defect structure of laser deposited Y-Ba-Cu-O thin films on single crystal MgO substrate

Journal of Materials Research ◽

10.1557/jmr.1990.0704 ◽

1990 ◽

Vol 5 (4) ◽

pp. 704-716 ◽

Cited By ~ 60

Author(s):

R. Ramesh ◽

D. M. Hwang ◽

J. B. Barner ◽

L. Nazar ◽

T. S. Ravi ◽

...

Keyword(s):

Thin Films ◽

Single Crystal ◽

Defect Structure ◽

Repeat Sequence ◽

Structural Defects ◽

Nominal Composition ◽

Stacking Sequence ◽

Antiphase Boundaries ◽

Edge Dislocations ◽

Mgo Substrate

Structural defects in thin films of nominal composition YBa2Cu3O7 (123) grown on single crystal MgO have been characterized. The main types of stacking defects correspond to the cationic stoichiometries of “248”, “247”, and “224”. Several types of edge dislocations have been observed. Due to the frequent changes in the stacking sequence, antiphase boundaries are created to accommodate the misfit across regions in which the repeat sequence is not identical. The films exhibit a mosaic microstructure due to the formation of grain boundaries in the a-b plane.

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Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application

MRS Proceedings ◽

10.1557/proc-747-t3.4 ◽

2002 ◽

Vol 747 ◽

Author(s):

Naoki Wakiya ◽

Kazuo Shinozaki ◽

Nobuyasu Mizutani

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Remanent Magnetization ◽

Zinc Ferrite ◽

Lattice Mismatch ◽

Magnetic Behavior ◽

Buffer Layers ◽

Si Substrate ◽

Antiphase Boundaries ◽

Nickel Zinc

ABSTRACTEpitaxial nickel zinc ferrite (Ni,Zn)Fe2O4 (NZF) thin films were successfully deposited on (MgO-Al2O3)/CeO2/YSZ/Si(001) substrates, where (MgO-Al2O3) is MgO doped with Al2O3. The crystallographic orientation and magnetic properties (saturation magnetization: Ms, and squareness: Mr/Ms where Mr is remanent magnetization) of NZF thin films were considerably changed with the amount of Al2O3 addition. If the amount of Al2O3 addition was less than 7 mol%, (001)-oriented epitaxial NZF thin films were obtained and the films had low squareness (around 45%). If the amount of Al2O3 addition was more than 7 mol%, (111)-oriented epitaxial NZF thin films were obtained and the films had high squareness (around 60–81%). Maximum squareness (81%) was obtained if the amount of Al2O3 addition was 26 mol%. For the sample with this Al2O3 content, the lattice mismatch between NZF and (MgO-Al2O3) buffer layer was 3.2%. The fact that high squareness was not obtained if lattice mismatch was very small (-0.3% on MgO) but obtained if lattice mismatch was 3.2% suggests that lattice mismatch to a certain content is important to avoid the formation of antiphase boundaries (APBs). This consideration was confirmed by examining other buffer layers having various lattice mismatches with NZF.

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Microstructural investigation of BaTiO3 thin films deposited on (001) MgO

Journal of Materials Research ◽

10.1557/jmr.2002.0285 ◽

2002 ◽

Vol 17 (8) ◽

pp. 1923-1931 ◽

Cited By ~ 6

Author(s):

C. H. Lei ◽

G. Van Tendeloo ◽

M. Siegert ◽

J. Schubert

Keyword(s):

Thin Films ◽

Displacement Vector ◽

Stacking Faults ◽

Pulsed Laser ◽

Interfacial Structure ◽

Antiphase Boundaries ◽

Microstructural Investigation ◽

Partial Dislocations ◽

Transmission Electron ◽

High Resolution Microscopy

The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b1 = 〈100〉 or b2 = 〈110〉, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3〈112〉 or 1/3〈111〉 partial dislocations; the displacement vector of the antiphase boundaries is 1/2〈101〉. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2〈110〉 and 1/2〈101〉.

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