Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

2021 ◽  
pp. 2108878
Author(s):  
Po‐Hung Tan ◽  
Che‐Hao Hsu ◽  
Ying‐Chun Shen ◽  
Chien‐Ping Wang ◽  
Kun‐Lin Liou ◽  
...  
Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 557 ◽  
Author(s):  
Haotian Liu ◽  
Li Zhang ◽  
King Li ◽  
Ooi Tan

The recent development of the Internet of Things (IoT) in healthcare and indoor air quality monitoring expands the market for miniaturized gas sensors. Metal oxide gas sensors based on microhotplates fabricated with micro-electro-mechanical system (MEMS) technology dominate the market due to their balance in performance and cost. Integrating sensors with signal conditioning circuits on a single chip can significantly reduce the noise and package size. However, the fabrication process of MEMS sensors must be compatible with the complementary metal oxide semiconductor (CMOS) circuits, which imposes restrictions on the materials and design. In this paper, the sensing mechanism, design and operation of these sensors are reviewed, with focuses on the approaches towards performance improvement and CMOS compatibility.


2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.


Atmosphere ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 647
Author(s):  
Tobias Baur ◽  
Johannes Amann ◽  
Caroline Schultealbert ◽  
Andreas Schütze

More and more metal oxide semiconductor (MOS) gas sensors with digital interfaces are entering the market for indoor air quality (IAQ) monitoring. These sensors are intended to measure volatile organic compounds (VOCs) in indoor air, an important air quality factor. However, their standard operating mode often does not make full use of their true capabilities. More sophisticated operation modes, extensive calibration and advanced data evaluation can significantly improve VOC measurements and, furthermore, achieve selective measurements of single gases or at least types of VOCs. This study provides an overview of the potential and limits of MOS gas sensors for IAQ monitoring using temperature cycled operation (TCO), calibration with randomized exposure and data-based models trained with advanced machine learning. After lab calibration, a commercial digital gas sensor with four different gas-sensitive layers was tested in the field over several weeks. In addition to monitoring normal ambient air, release tests were performed with compounds that were included in the lab calibration, but also with additional VOCs. The tests were accompanied by different analytical systems (GC-MS with Tenax sampling, mobile GC-PID and GC-RCP). The results show quantitative agreement between analytical systems and the MOS gas sensor system. The study shows that MOS sensors are highly suitable for determining the overall VOC concentrations with high temporal resolution and, with some restrictions, also for selective measurements of individual components.


Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.


1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi

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