scholarly journals Lateral Heterostructures: 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis (Adv. Funct. Mater. 27/2021)

2021 ◽  
Vol 31 (27) ◽  
pp. 2170198
Author(s):  
Emad Najafidehaghani ◽  
Ziyang Gan ◽  
Antony George ◽  
Tibor Lehnert ◽  
Gia Quyet Ngo ◽  
...  
2016 ◽  
Vol 52 (50) ◽  
pp. 7878-7881 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
Edward A. Lewis ◽  
David J. Lewis ◽  
Simon K. Howell ◽  
Sarah J. Haigh ◽  
...  

Bottom-up (aerosol-assisted chemical vapor deposition, AACVD) and top-down (liquid phase exfoliation, LPE) processing methodologies are used in tandem to produce colloids of few-layer thick rhenium disulfide (ReS2) in N-methyl pyrrolidone.


ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 4330-4344 ◽  
Author(s):  
Ananth Govind Rajan ◽  
Jamie H. Warner ◽  
Daniel Blankschtein ◽  
Michael S. Strano

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 16607-16611 ◽  
Author(s):  
Xinsheng Wang ◽  
Junhao Lin ◽  
Yiming Zhu ◽  
Chen Luo ◽  
Kazutomo Suenaga ◽  
...  

Controlled synthesis of group VB transition-metal dichalcogenide monolayers and few-layers with defined coordination and stacking is the key to the property investigation and device applications.


CrystEngComm ◽  
2020 ◽  
Vol 22 (10) ◽  
pp. 1858-1864
Author(s):  
Xiangzhuo Wang ◽  
Huixia Yang ◽  
Jingchuan Zheng ◽  
Yongkai Li ◽  
Xianglin Peng ◽  
...  

2D TMDCs with triangular-shaped and hexagonal-shaped kirigami structures are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD).


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


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