scholarly journals Self‐Referenced Temperature Imaging with Dual Light Emitting Diode Excitation and Single‐Band Emission of AVO 4 :Eu 3+ (A=Y, La, Lu, Gd) Nanophosphors

2021 ◽  
pp. 2100139
Author(s):  
Wojciech Piotrowski ◽  
Linda Dalipi ◽  
Karolina Elzbieciak-Piecka ◽  
Artur Bednarkiewicz ◽  
Benoit Fond ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Single Band ◽  
Temperature Imaging ◽  
Light Emitting ◽  
Band Emission

Color Tuning of Biomass-Derived Carbon Nanodots by Reaction Temperature Toward White Light-Emitting Diodes

NANO ◽  
2020 ◽  
Vol 15 (12) ◽  
pp. 2050159
Author(s):  
Yi Gong ◽  
Yanbing Han ◽  
Fang Zhang ◽  
Mingyue Zhai ◽  
Xing Chen ◽  
...  
Keyword(s):  
Reaction Temperature ◽  
White Light ◽  
Heating Temperature ◽  
Light Emitting Diode ◽  
Peak Position ◽  
Carbon Nanodots ◽  
One Pot ◽  
Light Emitting ◽  
White Leds ◽  
Band Emission

In this work, carbon nanodots (CNDs) were synthesized from extract of mango leaves. Sphere nanodots were formed rapidly by one-step microwave heating. The photoluminescence (PL) of the CNDs was found greatly dependent on the reaction temperature. The emission peak position of the CNDs changed from 550[Formula: see text]nm to 430[Formula: see text]nm when the heating temperature increased from 120[Formula: see text]C to 150[Formula: see text]C. Particularly, the CNDs synthesized at 130[Formula: see text]C showed multi-band emission at 411[Formula: see text]nm, 480[Formula: see text]nm and 530[Formula: see text]nm, providing emitting color from blue to yellow. Moreover, the free chlorophyll molecules in the solution added red fluorescence at 670[Formula: see text]nm, and the integrated emitting color of the CNDs solution was close to white. Coated on a commercial 365[Formula: see text]nm light-emitting diode (LED) chip, the CNDs showed greenish white light with CIE coordinates of (0.37, 0.44). This work provided a one-pot, rapid and green method to obtain multi-emissive CNDs toward white LEDs.

Broad-band emission from a multiple asymmetric quantum-well light-emitting diode

1991 ◽  
Vol 3 (5) ◽  
pp. 436-438 ◽  
Author(s):  
H. Hager ◽  
C.S. Hong ◽  
J. Mantz ◽  
E. Chan ◽  
D. Booher ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Broad Band ◽  
Light Emitting ◽  
Broad Band Emission ◽  
Band Emission ◽  
Asymmetric Quantum

scholarly journals A STUDY OF RED-EMITTING PHOSPHOR OF K2SiF6:Mn4+ FOR WARM WHITE LEDs

2018 ◽  
Vol 56 (1A) ◽  
pp. 183 ◽  
Author(s):  
Nguyen Le Anh
Keyword(s):  
Energy Transfer ◽  
Narrow Band ◽  
Light Emitting Diode ◽  
Forbidden States ◽  
Red Emission ◽  
Light Emitting ◽  
White Leds ◽  
Band Emission ◽  
Red Emitting Phosphor

This study focuses on the fabrication of red-emitting phosphor based on K2SiF6: Mn4+ phosphor. Characteristic emissive peaks in the red region of the Mn4+ ions involve the energy transfer from spin-forbidden states of 2Eg → 4A2, showing narrow band emission peaks at 609, 614, 631, 635 and 647 nm. Meanwhile, their absorptive peaks involve the energy transfer from spin-allowed states of 4A2 → 4Tg; the excited wavelength of the Mn4+ is in the range 360 - 460 nm. Thus, the K2SiF6: Mn4+ phosphor is particularly suitable for redundancy of 460 nm - Light Emitting Diode (LED); it complements the red emission of the commercial White LEDs.

The Properties of a P-Implanted GaN Light-Emitting Diode

2002 ◽  
Vol 743 ◽  
Author(s):  
J. Kikawa ◽  
S. Yoshida ◽  
Y. Itoh
Keyword(s):  
Mass Spectroscopy ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Yellow Band ◽  
Blue Band ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Band Emission ◽  
Peak Energy ◽  
Secondary Ion

ABSTRACTElectroluminescence measurements of P-implanted GaN light-emitting diodes were performed. The measured peak densities of P in the GaN were 5×10 cm−3 and 4×10 cm−3 based on secondary ion mass spectroscopy. The EL spectra had a broad blue-band emission at the peak energy from around 2.8 eV to 3.3 eV and yellow-band emission at an energy centered at 2.2 eV. The blue-band emission could decompose into two components at energy positions of 2.9 eV and 3.2 eV. The former component is considered to be emission due to the recombination of the bounding exciton by P atoms, known as an isoelectronic trap in GaN.

Two-Site Occupancy Induced a Broad-Band Emission in Phosphor K2YZr(PO4)3:Eu2+ for White-Light-Emitting Diode Applications

2020 ◽  
Vol 8 (51) ◽  
pp. 18992-19002
Author(s):  
Dan Zhao ◽  
Shi-Rui Zhang ◽  
Yan-Ping Fan ◽  
Bao-Zhong Liu ◽  
Ya-Nan Li ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diode ◽  
Broad Band ◽  
Site Occupancy ◽  
Light Emitting ◽  
Broad Band Emission ◽  
Band Emission

Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

2020 ◽  
pp. 144-148
Keyword(s):  
Quantum Dot ◽  
Delay Time ◽  
Chaos Synchronization ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Feedback Effect ◽  
Complete Synchronization ◽  
Light Emitting ◽  
Coupling Methods ◽  
Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

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