scholarly journals Side-Gated In2 O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

2016 ◽  
Vol 3 (9) ◽  
pp. 1600078 ◽  
Author(s):  
Meng Su ◽  
Zhenyu Yang ◽  
Lei Liao ◽  
Xuming Zou ◽  
Johnny C. Ho ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Memory Applications

scholarly journals High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

2012 ◽  
pp. 74-77
Author(s):  
Somnath Mondal ◽  
Fa-Hsyang Chen ◽  
Tung-Ming Pan
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Sandwich Structure ◽  
Oxygen Vacancies ◽  
Memory Cell ◽  
Switching Behavior ◽  
Electrical Performance ◽  
Data Retention ◽  
Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

A Magnetic Reconfigurable Ternary NOR/NAND Logic for Logic-in-Memory Applications

SPIN ◽  
2021 ◽  
Author(s):  
Farzad Razi ◽  
Mohammad Hossein Moaiyeri ◽  
Siamak Mohammadi
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Magnetic Tunnel Junction ◽  
Ternary Logic ◽  
Memory Element ◽  
Correct Operation ◽  
Promising Solution ◽  
Time Gap ◽  
Effect Transistor ◽  
Memory Applications

Logic-in memory has emerged as a promising solution to reduce the significant time gap between processor and memory. Simple logics such as NOR and NAND can be embedded in the memory for the purpose of data processing. Besides, ternary logic has been suggested to reduce the interconnects and the complexity of operations. In this paper, a reconfigurable ternary NOR/NAND logic compatible with ternary memories has been proposed. This scheme exploits magnetic tunnel junction as a nonvolatile memory element and a variable resistance, and carbon nanotube field-effect transistor for designing the peripheral circuits to achieve performance and efficiency. The proposed circuit is simulated using HSPICE and the results have validated the correct operation and high performance of the proposed design. Furthermore, the proposed designs are exploited in image processing applications to evaluate their performance in real applications, which gain averagely 52% improvement in the case of data loss.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

2014 ◽  
Vol 105 (17) ◽  
pp. 172902 ◽  
Author(s):  
Y. Zhang ◽  
Y. Y. Shao ◽  
X. B. Lu ◽  
M. Zeng ◽  
Z. Zhang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Charge Trapping ◽  
Defect States ◽  
Memory Applications

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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