Hole-Trapping Effect of the Aliphatic-Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection

2015 ◽  
Vol 1 (3) ◽  
pp. 1400014 ◽  
Author(s):  
Zhiming Zhong ◽  
Zhanhao Hu ◽  
Zhixiong Jiang ◽  
Jianbin Wang ◽  
Yawen Chen ◽  
...  
2000 ◽  
Vol 660 ◽  
Author(s):  
Li Yan ◽  
C.W. Tang ◽  
M. G. Mason ◽  
Yongli Gao

ABSTRACTTris(8-hydroxyquinoline) aluminum (Alq3) based organic light emission diodes (OLED) have been a focus of material research in recent years. One of the key issues in searching for a better device performance and fabricating conditions is suitable electron-injection materials. We have investigated the energy alignment and the interface formation between different metals and Alq3 using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The interface is formed by depositing the target cathode material, such as Ca, Al or Al/LiF, onto an Alq3 film in a stepwise fashion in an ultrahigh vacuum environment. While the UPS results show the work function and vacuum level changes during interfaces formation, implying a possible surface dipole layer, XPS results show a more detailed and complex behavior. When a low work function metal such as Ca is deposited onto an Alq3 surface, a gap state is observed in UPS. At the same time, a new peak can be observed in the N 1s core level at a lower binding energy. These results can be characterized as charge transfer from the low work function metal to Alq3. The shifting of core levels are also observed, which may be explained by doping from metal atoms or charge diffusion. These interfaces are drastically different than the Al/Alq3 interface, which has very poor electron injection. At the Al/Alq3 interface there is a destructive chemical reaction and much smaller core level shifts are observed. Based on detailed analysis, energy level diagrams at the interface are proposed.


2019 ◽  
Vol 75 ◽  
pp. 105427 ◽  
Author(s):  
Sunjoong Park ◽  
Minwon Suh ◽  
Kyungmok Kim ◽  
Moohyun Kim ◽  
Hyunjin Cho ◽  
...  

1996 ◽  
Vol 428 ◽  
Author(s):  
T. Brożek ◽  
Y. D. Chan ◽  
C. R. Viswanathan

AbstractHigh field electron injection in silicon oxide layers in metal-oxide-semiconductor system is widely known to degrade thin silicon oxide layers and the silicon-oxide interface, eventually leading to catastrophic oxide breakdown. In this work we report generation of hole traps under high-field stressing of thermal silicon dioxide layers on silicon. Excess hole trapping on newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide PMOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps is stress-polarity dependent and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. A correlation of density of generated hole traps with the amount of generated electron traps shows that both types of traps are effectively generated in the oxide layer under Fowler-Nordheim tunneling electron injection.


2000 ◽  
Vol 621 ◽  
Author(s):  
Jaedong Byun ◽  
Yongjei Lee ◽  
Boyun Jang ◽  
Youngmoon Yu ◽  
Sunyoun Ryou ◽  
...  

ABSTRACTSrTiO3 crystals containing varying concentrations of Pr and Ga were grown by a standard floating zone method and their photoluminescence characteristics were investigated. It was found that only a small fraction of Pr ions added are incorporated in the lattice. When the Ga ions are co-doped, the solubility of Pr ions is increased considerably. Comparing the ionic sizes of the host and dopants, it seems that the increase of solubility of Pr by Ga co-doping is due to charge compensation achieved by the additional Ga3+. The addition of Ga in Pr - activated SrTiO3 resulted also in a considerable enhancement of Pr3+ emission band at 615 nm. This result is attributed to the hole trapping effect of Ga3+ ions.


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