scholarly journals Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

2019 ◽  
Vol 6 (1) ◽  
pp. 1900860 ◽  
Author(s):  
Weiqing Zhou ◽  
Alexander N. Rudenko ◽  
Shengjun Yuan
2021 ◽  
Vol 23 (10) ◽  
pp. 6298-6308
Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
Lixin Chen ◽  
Zhiwen Chen ◽  
...  

The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).


AIP Advances ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 025306 ◽  
Author(s):  
Ali Vazinishayan ◽  
Dasaradha Rao Lambada ◽  
Shuming Yang ◽  
Guofeng Zhang ◽  
Biyao Cheng ◽  
...  

2019 ◽  
Vol 21 (27) ◽  
pp. 14713-14721 ◽  
Author(s):  
Hongyu Tang ◽  
Chunjian Tan ◽  
Huiru Yang ◽  
Kai Zheng ◽  
Yutao Li ◽  
...  

The external mechanical strain can efficiently modulate the photoresponse of the WS2/IGZO heterostructure to the UV light and the visible light.


Author(s):  
Juan J. Meléndez ◽  
A. Cantarero

The optical properties of ZrSiS arise from intense excitonic activity, with different character and spatial extension depending on the polarization of the incident light. The system also exhibits plasmonic activity, while the plasmons are unstable and decay into electron–hole pairs.


2020 ◽  
Vol 44 (36) ◽  
pp. 15785-15792 ◽  
Author(s):  
A. Bafekry ◽  
C. Nguyen ◽  
M. M. Obeid ◽  
M. Ghergherehchi

The effect of atomic doping on the electronic properties of C3N monolayer and graphene bilayer is investigated. We found that doped C3N monolayer and doped graphene bilayer are a direct semiconductor. Our result show that the electronic properties of the studied structures can be modulated by electric field and mechanical strain.


2010 ◽  
Vol 105 (6) ◽  
Author(s):  
Garnett W. Bryant ◽  
M. Zieliński ◽  
Natalia Malkova ◽  
James Sims ◽  
W. Jaskólski ◽  
...  

2020 ◽  
Vol 22 (24) ◽  
pp. 13650-13658 ◽  
Author(s):  
Xiaotian Wang ◽  
Zhenxiang Cheng ◽  
Gang Zhang ◽  
Minquan Kuang ◽  
Xiao-Lin Wang ◽  
...  

α-FeSi2 is a valuable candidate for spintronics application by utilization of type I, type II, and hybrid-type topological nodal line semimetals in a single material tuned by mechanical strain.


Author(s):  
K. Tsuno ◽  
T. Honda ◽  
Y. Harada ◽  
M. Naruse

Developement of computer technology provides much improvements on electron microscopy, such as simulation of images, reconstruction of images and automatic controll of microscopes (auto-focussing and auto-correction of astigmatism) and design of electron microscope lenses by using a finite element method (FEM). In this investigation, procedures for simulating the optical properties of objective lenses of HREM and the characteristics of the new lens for HREM at 200 kV are described.The process for designing the objective lens is divided into three stages. Stage 1 is the process for estimating the optical properties of the lens. Firstly, calculation by FEM is made for simulating the axial magnetic field distributions Bzc of the lens. Secondly, electron ray trajectory is numerically calculated by using Bzc. And lastly, using Bzc and ray trajectory, spherical and chromatic aberration coefficients Cs and Cc are numerically calculated. Above calculations are repeated by changing the shape of lens until! to find an optimum aberration coefficients.


Author(s):  
A. Strojnik ◽  
J.W. Scholl ◽  
V. Bevc

The electron accelerator, as inserted between the electron source (injector) and the imaging column of the HVEM, is usually a strong lens and should be optimized in order to ensure high brightness over a wide range of accelerating voltages and illuminating conditions. This is especially true in the case of the STEM where the brightness directly determines the highest resolution attainable. In the past, the optical behavior of accelerators was usually determined for a particular configuration. During the development of the accelerator for the Arizona 1 MEV STEM, systematic investigation was made of the major optical properties for a variety of electrode configurations, number of stages N, accelerating voltages, 1 and 10 MEV, and a range of injection voltages ϕ0 = 1, 3, 10, 30, 100, 300 kV).


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