Unlocking Failure Mechanisms and Improvement of Practical Li–S Pouch Cells through In Operando Pressure Study

2021 ◽  
pp. 2103048
Author(s):  
Parameswara R. Chinnam ◽  
Leidong Xu ◽  
Lu Cai ◽  
Nikolaus L. Cordes ◽  
Sangwook Kim ◽  
...  
Keyword(s):  
Failure Mechanisms ◽  
In Operando

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Real-time cryo-deformation of polypropylene and impact-modified polypropylene in the transmission electron microscope

1993 ◽  
Vol 51 ◽  
pp. 892-893
Author(s):  
Robert C. Cieslinski ◽  
H. Craig Silvis ◽  
Daniel J. Murray
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Failure Mechanisms ◽  
Brittle Transition ◽  
Molded Part ◽  
Transmission Electron ◽  
Solvent Cast ◽  
The Impact ◽  
Annealed Copper ◽  
Dynamic Plane

An understanding of the mechanical behavior polymers in the ductile-brittle transition region will result in materials with improved properties. A technique has been developed that allows the realtime observation of dynamic plane stress failure mechanisms in the transmission electron microscope. With the addition of a cryo-tensile stage, this technique has been extented to -173°C, allowing the observation of deformation during the ductile-brittle transition.The technique makes use of an annealed copper cartridge in which a thin section of bulk polymer specimen is bonded and plastically deformed in tension in the TEM using a screw-driven tensile stage. In contrast to previous deformation studies on solvent-cast films, this technique can examine the frozen-in morphology of a molded part.The deformation behavior of polypropylene and polypropylene impact modified with EPDM (ethylene-propylene diene modified) and PE (polyethylene) rubbers were investigated as function of temperature and the molecular weight of the impact modifier.

Stochastic Computing via In Operando Modulation of Rectification in Molecular Tunneling Junctions

2020 ◽  
Author(s):  
Xinkai Qiu ◽  
Sylvia Rousseva ◽  
Gang Ye ◽  
Jan C. Hummelen ◽  
Ryan Chiechi
Keyword(s):  
Self Assembly ◽  
Variable Temperature ◽  
Self Assembled Monolayers ◽  
Microfluidic Channels ◽  
Proof Of Concept ◽  
Glycol Ethers ◽  
Stochastic Computing ◽  
Assembled Monolayers ◽  
In Operando ◽  
Tunneling Junctions

This paper describes the reconfiguration of molecular tunneling junctions during operation via the self-assembly of bilayers of glycol ethers. We use well-established functional groups to modulate the magnitude and direction of rectification in assembled tunneling junctions by exposing them to solutions containing different glycol ethers. Variable-temperature measurements establish that rectification occurs by a bias-dependent tunneling-hopping mechanism and that glycol ethers, beside being an unusually efficient tunneling medium, behave identically to alkanes. We fabricated memory bits from crossbar junctions prepared by injecting eutectic Ga-In into microfluidic channels. Two 8-bit registers were able to perform logical AND operations on bit strings encoded into chemical packets as microfluidic droplets that alter the composition of the crossbar junctions through self-assembly to effect memristor-like properties. This proof of concept work demonstrates the potential for fieldable molecular-electronic devices based on tunneling junctions of self-assembled monolayers and bilayers.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

2008 ◽  
Author(s):  
Suk Min Kim ◽  
Jung Ho Lee ◽  
Jong Hak Lee ◽  
Hyung Ki Kim ◽  
Myung Sick Chang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Electrical Characteristics ◽  
The Future ◽  
Electrical Analysis

Abstract We report an analysis of a single shared column fail on DRAM technology using a nano-probing technique in this work. The electrical characteristics of the failed transistors show that the column fails were caused by two different failure mechanisms: abnormal contact and implant profiles. We believe that electrical analysis using nano-probing will be a powerful tool for non-visible failure analysis in the future because it is impossible to clearly reveal these two different failure mechanisms solely using physical failure methods.

Root Cause Analyses of Metal Bridging for Copper Damascene Process

2005 ◽  
Author(s):  
Z. G. Song ◽  
S. P. Neo ◽  
S. K. Loh ◽  
C. K. Oh
Keyword(s):  
Failure Mechanisms ◽  
Copper Corrosion ◽  
Microelectronic Device ◽  
Root Cause ◽  
Damascene Process ◽  
New Process ◽  
Copper Cmp

Abstract New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.

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