Vapor deposition polymerization of synthetic rubber thin film in a plasma enhanced chemical vapor deposition reactor

2020 ◽  
Vol 138 (4) ◽  
pp. 49722
Author(s):  
Mehmet Gürsoy
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reactor ◽  
Synthetic Rubber

Cavity ring-down spectroscopy of CH and CD radicals in a diamond thin film chemical vapor deposition reactor

2001 ◽  
Vol 73 (1) ◽  
pp. 27-33 ◽  
Author(s):  
U. Lommatzsch ◽  
E.H. Wahl ◽  
D. Aderhold ◽  
T.G. Owano ◽  
C.H. Kruger ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cavity Ring Down Spectroscopy ◽  
Chemical Vapor Deposition Reactor ◽  
Diamond Thin Film ◽  
Cavity Ring Down

Numerical Evaluation of Silicon-Thin Film Growth from SiHCl3-H2Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1977-1985 ◽  
Author(s):  
Hitoshi Habuka ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Numerical Evaluation ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Chemical Vapor Deposition Reactor

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition

2005 ◽  
Author(s):  
S.L. Wright ◽  
M.B. Rothwell ◽  
I.H. Souk ◽  
Y. Kuo
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Dilute Gas ◽  
Gas Plasma ◽  
Si Thin Film

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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