Transparent and conductive La-doped barium stannate for optoelectronic applications: thin film chemical vapor deposition

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition

10.1109/drc.1993.1009602 ◽

2005 ◽

Author(s):

S.L. Wright ◽

M.B. Rothwell ◽

I.H. Souk ◽

Y. Kuo

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Dilute Gas ◽

Gas Plasma ◽

Si Thin Film

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Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

MRS Proceedings ◽

10.1557/proc-508-151 ◽

1998 ◽

Vol 508 ◽

Author(s):

A. Izumi ◽

T. Ichise ◽

H. Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

State Density ◽

Gate Insulator ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric

Journal of The Electrochemical Society ◽

10.1149/1.3499348 ◽

2010 ◽

Vol 157 (12) ◽

pp. H1110 ◽

Cited By ~ 8

Author(s):

K. Remashan ◽

Y. S. Choi ◽

S. J. Park ◽

J. H. Jang

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Field Effect ◽

High Field ◽

Gate Dielectric ◽

Chemical Vapor ◽

Zno Thin Film ◽

Field Effect Mobility

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Characterization of Microcrystalline Silicon Thin Film Solar Cells Prepared by High Working Pressure Plasma-enhanced Chemical Vapor Deposition

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2017.8366297 ◽

2017 ◽

Author(s):

Jung-Dae Kwon ◽

Dong-Ho Kim ◽

Ji-Hoon Lee ◽

Myungkwan Song ◽

Myunghun Shin

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Thin Film Solar Cells ◽

Microcrystalline Silicon ◽

Silicon Thin Film ◽

Working Pressure ◽

High Working Pressure

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Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation

Thin Solid Films ◽

10.1016/j.tsf.2011.01.297 ◽

2011 ◽

Vol 519 (14) ◽

pp. 4479-4482 ◽

Cited By ~ 17

Author(s):

D.A. Spee ◽

R. Bakker ◽

C.H.M. van der Werf ◽

M.J. van Steenbergen ◽

J.K. Rath ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Gas Barrier ◽

Polymer Layers ◽

Initiated Chemical Vapor Deposition

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The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

International Journal of Modern Physics B ◽

10.1142/s021797921744101x ◽

2017 ◽

Vol 31 (16-19) ◽

pp. 1744101 ◽

Cited By ~ 1

Author(s):

Bitao Chen ◽

Yingke Zhang ◽

Qiuping Ouyang ◽

Fei Chen ◽

Xinghua Zhan ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Solar Cell ◽

Vapor Deposition ◽

Gas Flow ◽

Silicon Solar Cell ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Double Layers ◽

Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

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