ChemInform Abstract: Reduced-Pressure Chemical Vapor Synthesis of Nanocrystalline Silicon Carbide Powders.

ChemInform ◽  
2010 ◽  
Vol 29 (38) ◽  
pp. no-no
Author(s):  
S. KLEIN ◽  
M. WINTERER ◽  
H. HAHN
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Reduced Pressure ◽  
Chemical Vapor Synthesis ◽  
Pressure Chemical ◽  
Nanocrystalline Silicon Carbide

Beta Silicon Carbide Growth with Device Applications

1987 ◽  
Vol 97 ◽  
Author(s):  
G. L. Harris ◽  
M. G. Spencer ◽  
K. Jackson ◽  
A. Jones ◽  
K. Osborne ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Thin Films ◽  
Electrical Measurements ◽  
Reduced Pressure ◽  
Device Structures ◽  
Pressure Chemical ◽  
Device Applications

ABSTRACTEpitaxial thin films of cubic-SiC (100) have been grown at temperatures ranging from 1340–1400°C by using a reduced pressure chemical vapor deposition system. In this work, we will report on the doping of SiC using trimethylalumium (TMA), phosphine, and nitrogen. The electrical measurements on the SiC layers have been performed (Hall, CV, DLTS, etc.) and will be discussed in reference to SiC MESFETs and other SiC device structures.

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