Study of single event transient induced by heavy‐ion in NMOS transistor and CMOS inverter

2018 ◽  
Vol 31 (12) ◽  
Author(s):  
Cheng Gao ◽  
Rui Zhang ◽  
Jiaoying Huang ◽  
Chengcheng Fu
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient ◽  
Cmos Inverter ◽  
Nmos Transistor

scholarly journals The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Symmetry ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 154 ◽  
Author(s):  
Jizuo Zhang ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
Shouping Li ◽  
Liang Fang
Keyword(s):  
Integrated Circuit ◽  
Semiconductor Device ◽  
Transient State ◽  
Heavy Ion ◽  
Sensitive Volume ◽  
Substrate Noise ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient ◽  
Cosmic Particle

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.

Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

2017 ◽  
Vol 60 (12) ◽  
Author(s):  
Jinxin Zhang ◽  
Hongxia Guo ◽  
Fengqi Zhang ◽  
Chaohui He ◽  
Pei Li ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Bipolar Transistor ◽  
Single Event ◽  
Single Event Transient

Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators

2002 ◽  
Vol 49 (6) ◽  
pp. 3121-3128 ◽  
Author(s):  
S.D. LaLumondiere ◽  
R. Koga ◽  
P. Yu ◽  
M.C. Maher ◽  
S.C. Moss
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient

Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain

2008 ◽  
Vol 55 (4) ◽  
pp. 2001-2006 ◽  
Author(s):  
D. Truyen ◽  
J. Boch ◽  
B. Sagnes ◽  
J.-R. Vaille ◽  
N. Renaud ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

2020 ◽  
Vol 35 (10) ◽  
pp. 105010
Author(s):  
Guoliang Tian ◽  
Jinshun Bi ◽  
Gaobo Xu ◽  
Kai Xi ◽  
Xueqin Yang ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Transient Effects ◽  
Single Event Transient ◽  
Tcad Simulation

3D Simulation of Heavy-Ion Induced Charge Collection in Sub-100nm MOS-FETs Using Strained Silicon-Germanium

2014 ◽  
Vol 918 ◽  
pp. 237-242
Author(s):  
Bin Zhou ◽  
Xin Chun Wu ◽  
Ming Xue Huo
Keyword(s):  
Bias Voltage ◽  
Silicon Germanium ◽  
Heavy Ion ◽  
Strained Silicon ◽  
Single Event ◽  
Single Event Transient ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Current Duration ◽  
The Impact

Single event transient of a PMOS using strained Silicon-Germanium in a sub-100nm bulk process is studied by 3D TCAD simulation. The impact of bias voltage, temperature, LET, and struck position on SET is considered. Our simulation results demonstrate that bias voltage in the range 0.8 to 1.2V greatly influence the amplitude of SET current. Temperature has a stronger influence on a SiGe channel PMOS than a Si-channel PMOS. Both SET current duration and total collection charge increase as LET increases, and SET current duration and total collection of a SiGe channel PMOS are larger than that of Si channel PMOS. These simulation results are beneficial to the space application of SiGe circuits.

Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation

2012 ◽  
Vol 48 (3) ◽  
pp. 171 ◽  
Author(s):  
K. Schweiger ◽  
M. Hofbauer ◽  
H. Dietrich ◽  
H. Zimmermann ◽  
K.O. Voss ◽  
...  
Keyword(s):  
Voltage Pulse ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient ◽  
Heavy Ion Irradiation ◽  
Dependent Measurement ◽  
Transient Voltage
Sign in / Sign up

Export Citation Format

Share Document