scholarly journals Ultralow power voltage reference circuit for implantable devices in standard CMOS technology

2019 ◽  
Vol 47 (7) ◽  
pp. 991-1005
Author(s):  
Óscar Pereira‐Rial ◽  
Paula López ◽  
Juan M. Carrillo ◽  
Víctor M. Brea ◽  
Diego Cabello
2014 ◽  
Vol 61 (2) ◽  
pp. 967-974 ◽  
Author(s):  
Y. Piccin ◽  
H. Lapuyade ◽  
Y. Deval ◽  
C. Morche ◽  
J.-Y. Seyler ◽  
...  

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.


2013 ◽  
Vol 816-817 ◽  
pp. 882-886 ◽  
Author(s):  
Sonal Singhal ◽  
Rohit Singh ◽  
Amit Kumar Singh

This paper proposes a low power voltage reference generator in 0.18μm CMOS technology.The circuit presented here includes MOSFETs in sub threshold mode and uses the temperature dependence of threshold voltages and sub-threshold current of MOSFET to form a temperature-insensitive reference. An input supply voltage of 1.8 Volt is used for the circuit generating a total current of 1.33μA. By varying the device temperature over the range of-20°C to 100°C corresponding variation over the output voltage was found to lie in the range 397.8 to 400.2 mV. Thus a 0.6% variation in voltage over the considered range of temperature is obtained.


2013 ◽  
Vol 10 (4) ◽  
pp. 20120945-20120945 ◽  
Author(s):  
A. Sahafi ◽  
J. Sobhi ◽  
Z.D. Koozekanani

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