Design of a Sub-0.4 V Reference Circuit in 0.18μm CMOS Technology

2013 ◽  
Vol 816-817 ◽  
pp. 882-886 ◽  
Author(s):  
Sonal Singhal ◽  
Rohit Singh ◽  
Amit Kumar Singh
Keyword(s):  
Temperature Dependence ◽  
Output Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Threshold Current ◽  
Total Current ◽  
Voltage Reference ◽  
Threshold Voltages ◽  
Reference Generator ◽  
Reference Circuit

This paper proposes a low power voltage reference generator in 0.18μm CMOS technology.The circuit presented here includes MOSFETs in sub threshold mode and uses the temperature dependence of threshold voltages and sub-threshold current of MOSFET to form a temperature-insensitive reference. An input supply voltage of 1.8 Volt is used for the circuit generating a total current of 1.33μA. By varying the device temperature over the range of-20°C to 100°C corresponding variation over the output voltage was found to lie in the range 397.8 to 400.2 mV. Thus a 0.6% variation in voltage over the considered range of temperature is obtained.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

A New No Op Amp Full CMOS Voltage Reference Circuit

2014 ◽  
Vol 519-520 ◽  
pp. 1067-1070
Author(s):  
Jian Ying Shi ◽  
Hui Ya Li ◽  
Yan Bin Xu
Keyword(s):  
Power Consumption ◽  
Temperature Coefficient ◽  
Output Voltage ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Voltage Reference ◽  
Op Amp ◽  
Reference Circuit ◽  
Simulation Results ◽  
Cmos Voltage Reference

A no op amp structure full CMOS reference voltage circuit is designed. The two currents which are proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) are added together to get the reference output voltage which is obtained through a resistance. The characteristics of the new circuit are simulated using 0.5 μm BSIM3V3 spice models in HSPICE. The simulation results show that the output voltage of the circuit is 997mV, the power consumption is 1.12mW, the temperature coefficient is 15.2 ppm/°C in the range from-30°C to 100°C at the supply voltage of 2V.

scholarly journals Ultralow power voltage reference circuit for implantable devices in standard CMOS technology

2019 ◽  
Vol 47 (7) ◽  
pp. 991-1005
Author(s):  
Óscar Pereira‐Rial ◽  
Paula López ◽  
Juan M. Carrillo ◽  
Víctor M. Brea ◽  
Diego Cabello
Keyword(s):  
Cmos Technology ◽  
Implantable Devices ◽  
Voltage Reference ◽  
Reference Circuit ◽  
Ultralow Power

Radiation-Hardening Technique for Voltage Reference Circuit in a Standard 130 nm CMOS Technology

2014 ◽  
Vol 61 (2) ◽  
pp. 967-974 ◽  
Author(s):  
Y. Piccin ◽  
H. Lapuyade ◽  
Y. Deval ◽  
C. Morche ◽  
J.-Y. Seyler ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Radiation Hardening ◽  
Voltage Reference ◽  
Reference Circuit

A Design of Low Temperature Dependence Voltage Reference Circuit for PWM Controller

2013 ◽  
Vol 310 ◽  
pp. 448-452
Author(s):  
Zhi Chao Zhao ◽  
Tie Feng Wu ◽  
Jing Li ◽  
Li Min Li ◽  
Qie Pan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
High Performance ◽  
Voltage Reference ◽  
Zener Diode ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Bipolar Voltage ◽  
Compensation Principle ◽  
Reference Circuit

In order to provide steady voltage for PWM controller, a design of bipolar voltage reference circuit with high performance is presented. The circuit based on the compensation principle between Zener diode and B-E junction of triode is used in PWM controller and can bring out multi-way steady voltages, moreover, there is a high power supply rejection ratio (PSRR) and low temperature dependence. The results of simulation and test in Candence with bipolar process of HuaYue SB45 show that the temperature coefficient is about 1.2ppm/°C in the temperature range -55~125°C. The line regulation is about 0.4mV/V in 8~30V and the PSRR is 77.54dB. The design of circuit can satisfy the requirements of PWM controller.

DESIGN OF A CMOS BANDGAP REFERENCE CIRCUIT WITH A WIDE TEMPERATURE RANGE, HIGH PRECISION AND LOW TEMPERATURE COEFFICIENT

2014 ◽  
Vol 23 (08) ◽  
pp. 1450107 ◽  
Author(s):  
JUN-DA CHEN ◽  
CHENG-KAI YE
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Range ◽  
Wide Range ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Cmos Voltage Reference

This paper presents an approach to the design of a high-precision CMOS voltage reference. The proposed circuit is designed for TSMC 0.35 μm standard CMOS process. We design the first-order temperature compensation bandgap voltage reference circuit. The proposed post-simulated circuit delivers an output voltage of 0.596 V and achieves the reported temperature coefficient (TC) of 3.96 ppm/°C within the temperature range from -60°C to 130°C when the supply voltage is 1.8 V. When simulated in a smaller temperature range from -40°C to 80°C, the circuit achieves the lowest reported TC of 2.09 ppm/°C. The reference current is 16.586 μA. This circuit provides good performances in a wide range of temperature with very small TC.

scholarly journals A 167.18 ppm/°C temperature coefficient, area efficient voltage reference using only MOS transistors

2020 ◽  
Vol 17 (1) ◽  
pp. 31-40
Author(s):  
Guru Prasad ◽  
Kumara Shama
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Voltage Reference ◽  
Mos Transistors ◽  
Inversion Region ◽  
Strong Inversion ◽  
Reference Circuit ◽  
Simulation Results

In this paper, design of a voltage reference circuit using only MOS transistors and without employing an operational amplifier is presented. A proportional to absolute temperature [PTAT] voltage and a PTAT current are designed then difference of the PTAT voltage and product of the PTAT current and resistor gives the temperature independent voltage. The advantages of both sub-threshold and strong inversion region operation of MOS transistors are exploited in the design. The voltage reference is implemented using standard CMOS 180 nm technology. The voltage reference provides a voltage of 224.3 mV consuming a quiescent current of 30 ?A at room temperature. Post layout simulation results show that the proposed voltage reference has a temperature coefficient of 167.18 ppm/?C and varies only 3mV when there is a ?10% variation in supply voltage. The circuit occupies an area of only 93.6?32.6?m on the chip, making it suitable for area constraint applications.

Sign in / Sign up

Export Citation Format

Share Document