Impact of laser excitation intensity on deep UV fluorescence detection in microchip electrophoresis

2008 ◽  
Vol 29 (24) ◽  
pp. 4894-4899 ◽  
Author(s):  
Philipp Schulze ◽  
Martin Ludwig ◽  
Detlev Belder
Author(s):  
Bruno Charlier ◽  
Albino Coglianese ◽  
Francesca Felicia Operto ◽  
Federica De Rosa ◽  
Francesca Mensitieri ◽  
...  

2021 ◽  
pp. 2150392
Author(s):  
B. D. Urmanov ◽  
M. S. Leanenia ◽  
G. P. Yablonskii ◽  
O. B. Taghiyev ◽  
K. O. Taghiyev ◽  
...  

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.


Author(s):  
Emmanuel Gutmann ◽  
Florian Erfurth ◽  
Anke Drewitz ◽  
Armin Scheibe ◽  
Martina C. Meinke

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