Photoluminescence of Ca4Ga2S7:Eu2+ in wide excitation intensity and temperature range

2021 ◽  
pp. 2150392
Author(s):  
B. D. Urmanov ◽  
M. S. Leanenia ◽  
G. P. Yablonskii ◽  
O. B. Taghiyev ◽  
K. O. Taghiyev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Excitation Intensity ◽  
Temperature Measurements ◽  
Constant Time ◽  
Photoluminescence Properties ◽  
Temperature Range ◽  
Chalcogenide Semiconductors ◽  
Time Frames

Photoluminescence properties of [Formula: see text] chalcogenide semiconductors have been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room temperature. This study has shown that as a result of excitation, photoluminescence of [Formula: see text] is characterized by the emission in the interval of 450–575 nm with significant domination in the spectra line at 660 nm. Photoluminescence of [Formula: see text] quenches at wavelengths of 560 nm and 660 nm with constant time frames 258 ns and 326 ns, respectively. Moreover, the temperature measurements of photoluminescence were performed on the samples in the temperature range of 10–300 K.

Study of the photoluminescence properties of Eu2+-doped Ca(AlxGa1−x)2S4 solid solutions at high excitation intensity and low temperature

2018 ◽  
Vol 32 (25) ◽  
pp. 1850306
Author(s):  
E. G. Asadov ◽  
O. B. Tagiev ◽  
K. O. Tagiev ◽  
G. S. Hadjieva ◽  
M. S. Leanenia ◽  
...  
Keyword(s):  
Power Density ◽  
Solid Solutions ◽  
Room Temperature ◽  
Emission Spectra ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Excitation Power Density ◽  
Photoluminescence Properties ◽  
First Time ◽  
Extreme Stability

The investigation of photoluminescence (PL) properties of Ca(Al[Formula: see text]Ga[Formula: see text]S4:Eu[Formula: see text] solid solutions with [Formula: see text] = 0, 0.1, 0.2 and 0.3 synthesized for the first time was performed in wide temperature and excitation power density ranges. It is shown that PL intensity decreases by only 20–30% for different [Formula: see text] in the temperature range from 10 K to 300 K. The extreme stability of shape and position of the emission spectra was found in the range of excitation power density from [Formula: see text] W/cm2 to [Formula: see text] W/cm2 by nanosecond pulsed radiation. The reversible PL efficiency droop was only above 104 W/cm2 of excitation power density. The PL decay time constant was found to be of about 560 ns to 595 ns for [Formula: see text] ranging between 0.1 and 0.3 at room temperature.

scholarly journals Low Energy Pulsed Laser Excitation in UV Enhances the Gas Sensing Capacity of Photoluminescent ZnO Nanohybrids

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5490 ◽  
Author(s):  
Argyro Klini ◽  
Maria Androulidaki ◽  
Demetrios Anglos
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Gas Sensing ◽  
Pulsed Laser ◽  
Pump Energy ◽  
Excitation Intensity ◽  
Low Energy ◽  
Pl Emission ◽  
Excitation Parameters ◽  
Sensing Performance

Nanohybrids, composed of luminescent zinc oxide (ZnO) nanoparticles dispersed in an inert polydimethylsiloxane (PDMS) matrix, exhibit an excellent ability to follow changes in the type and composition of their surrounding atmosphere. These changes are found to affect the UV photoluminescence (PL) emission of the ZnO-PDMS hybrids measured at room temperature. The influence of irradiation parameters, such as excitation intensity and wavelength, on the response of the ZnO-PDMS sensor against ethanol and oxygen, have been systematically investigated in a comparative study performed employing pulsed excitation at 248 and 355 nm. This study represents the first demonstration that the sensing performance of the PL-based ZnO sensors can be optimized by tuning the excitation parameters and it particularly illustrates that maintaining a low pump energy density is crucial for enhancing the sensitivity of the sensor achieving response values approaching 100%.

scholarly journals Nonlinear Optical Response of a WS2 Monolayer at Room Temperature upon Multicolor Laser Excitation

ACS Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 550-556
Author(s):  
Javier Hernandez-Rueda ◽  
Marc L. Noordam ◽  
Irina Komen ◽  
L. Kuipers
Keyword(s):  
Nonlinear Optical ◽  
Room Temperature ◽  
Laser Excitation ◽  
Optical Response ◽  
Nonlinear Optical Response ◽  
Ws2 Monolayer

Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range

2021 ◽  
Vol 129 (24) ◽  
pp. 243104
Author(s):  
M. S. Leanenia ◽  
E. V. Lutsenko ◽  
M. V. Rzheutski ◽  
G. P. Yablonskii ◽  
T. G. Naghiyev ◽  
...  
Keyword(s):  
Excitation Intensity ◽  
Photoluminescence Study ◽  
Temperature Range

Temperature dependence of chlorine-35 N.Q.R. in 2,6-Dichlorophenol

1978 ◽  
Vol 31 (4) ◽  
pp. 791 ◽  
Author(s):  
R Chandramani ◽  
SP Basavaraju ◽  
N Devaraj
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Brown's Method

Chlorine n.q.r, in 2,6-dichlorophenol has been investigated at temperatures from 77 K to room temperature. Two resonance lines due to chemically inequivalent sites have been observed throughout this temperature range. Torsional frequencies of the molecule have been calculated at temperatures from 77 to 300 K according to Bayer's theory and Brown's method. Also the temperature coefficients of the torsional frequencies have been calculated.

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

NQR and Crystal Structure of 4,5-Dichloroimidazole, C3H2N2Cl2

1992 ◽  
Vol 47 (1-2) ◽  
pp. 177-181 ◽  
Author(s):  
Shi-Qi Dou ◽  
Alarich Weiss
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Unit Cell ◽  
Space Group ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Group D

AbstractThe two line 35Cl NQR spectrum of 4,5-dichloroimidazole was measured in the temperature range 77≦ T/K ≦ 389. The temperature dependence of the NQR frequencies conforms with the Bayer model and no phase transition is indicated in the curves v ( 35Cl)= f(T). Also the temperature coefficients of the 35Cl NQR frequencies are "normal". At 77 K the 35Cl NQR frequencies are 37.409 MHz and 36.172 MHz and at 389 K 35.758 MHz and 34.565 MHz. The compound crystallizes at room temperature with the tetragonal space group D44-P41212, Z = 8 molecules per unit cell; at 295 K : a = 684.2(5) pm, c = 2414.0(20) pm. The relations between the crystal structure and the NQR spectrum are discussed.

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

Gold nanoresistors with near-constant resistivity in the cryogenic-to-room temperature range

2011 ◽  
Vol 110 (2) ◽  
pp. 023303 ◽  
Author(s):  
M. M. A. Yajadda ◽  
I. Levchenko ◽  
K. Ostrikov
Keyword(s):  
Room Temperature ◽  
Temperature Range

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

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