Design of low phase noise K‐band VCO using high quality factor resonator in 0.18 μm CMOS technology

2021 ◽  
Author(s):  
Islam Mansour ◽  
Marwa Mansour ◽  
Mohamed Aboualalaa ◽  
Ramesh K. Pokharel
Keyword(s):  
Phase Noise ◽  
Quality Factor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
High Quality ◽  
Low Phase Noise ◽  
K Band

scholarly journals Low phase noise oscillator stabilised by high quality factor AFSIW resonators

2018 ◽  
Vol 54 (19) ◽  
pp. 1128-1130 ◽  
Author(s):  
Zhiqiang Liu ◽  
Jinping Xu ◽  
Wenbo Wang
Keyword(s):  
Phase Noise ◽  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Low Phase Noise

A LOW-PHASE-NOISE CMOS VCO FOR K-BAND APPLICATION

2013 ◽  
Vol 22 (06) ◽  
pp. 1350040
Author(s):  
MEI-LING YEH ◽  
YAO-CHIAN LIN ◽  
CHUNG-CHENG CHANG
Keyword(s):  
Phase Noise ◽  
Figure Of Merit ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Chip Size ◽  
High Figure ◽  
Low Phase Noise ◽  
Capacitive Feedback ◽  
Measured Phase ◽  
K Band

A new high figure-of-merit (FOM) and low-phase-noise 20.73-GHz voltage-controlled oscillator is designed for K-band applications in this paper. The capacitive feedback technique is used for the low-phase-noise VCO design. The VCO can be tuned from 20.817 GHz to 20.266 GHz. The measured phase noise is -115.57 dBc/Hz at 1 MHz offset from the carrier frequency. The corresponding FOM is calculated to be -190 dBc/Hz. The VCO is implemented with the TSMC 0.18 μm one-poly-six-metal 1.7 V mixed-signal/RF CMOS technology, and the chip size is 0.51 × 0.74 mm2.

scholarly journals K-Band Low Phase Noise VCO Based on Q-Boosted Switched Inductor

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1132 ◽  
Author(s):  
Zhe Chen ◽  
Ji-Xin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Fang Zhu
Keyword(s):  
Resonance Frequency ◽  
Phase Noise ◽  
Quality Factor ◽  
Eddy Current ◽  
Noise Voltage ◽  
Secondary Coil ◽  
Voltage Controlled Oscillator ◽  
Bicmos Process ◽  
Low Phase Noise ◽  
K Band

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2–5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.

Dual Band VCO Based on a High-Quality Factor Switched Interdigital Resonator for the Ku Band Using 180-nm CMOS Technology

2018 ◽  
Vol 65 (12) ◽  
pp. 1874-1878 ◽  
Author(s):  
Islam Mansour ◽  
Mohamed Aboualalaa ◽  
Ahmed Allam ◽  
Adel B. Abdel-Rahman ◽  
Mohammed Abo-Zahhad ◽  
...  
Keyword(s):  
Quality Factor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
Dual Band ◽  
High Quality ◽  
Ku Band

scholarly journals Digitally-Controlled Bondwire Inductor with High Quality Factor and Wide Tuning Range

2020 ◽  
Vol 20 (3) ◽  
pp. 207-212
Author(s):  
Yonggoo Lee ◽  
Bomson Lee
Keyword(s):  
Quality Factor ◽  
Integrated Circuit ◽  
Tuning Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Wide Tuning Range ◽  
High Quality

A tunable bondwire inductor (TBI) with high-quality factor and wide tuning range is presented. The proposed TBI is fabricated on a single chip by combining a single-pole four-throw (SP4T) switch integrated circuit (IC) and four bondwire inductors on a package substrate. The SP4T switch IC is fabricated using 180 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The fabricated TBI chip exhibits a 521% tuning range of inductance from 1.77 to 11 nH at 0.1 GHz and a relatively high-quality factor. To the knowledge of the authors, the results of this work demonstrate the best combined performance of inductance tuning range and quality factor.

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