A LOW-PHASE-NOISE CMOS VCO FOR K-BAND APPLICATION

2013 ◽  
Vol 22 (06) ◽  
pp. 1350040
Author(s):  
MEI-LING YEH ◽  
YAO-CHIAN LIN ◽  
CHUNG-CHENG CHANG
Keyword(s):  
Phase Noise ◽  
Figure Of Merit ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Chip Size ◽  
High Figure ◽  
Low Phase Noise ◽  
Capacitive Feedback ◽  
Measured Phase ◽  
K Band

A new high figure-of-merit (FOM) and low-phase-noise 20.73-GHz voltage-controlled oscillator is designed for K-band applications in this paper. The capacitive feedback technique is used for the low-phase-noise VCO design. The VCO can be tuned from 20.817 GHz to 20.266 GHz. The measured phase noise is -115.57 dBc/Hz at 1 MHz offset from the carrier frequency. The corresponding FOM is calculated to be -190 dBc/Hz. The VCO is implemented with the TSMC 0.18 μm one-poly-six-metal 1.7 V mixed-signal/RF CMOS technology, and the chip size is 0.51 × 0.74 mm2.

Design of a Low-Phase-Noise LC Voltage Controlled Oscillator

2014 ◽  
Vol 519-520 ◽  
pp. 1095-1098
Author(s):  
Cheng Hong Dong ◽  
Chang Chun Zhang ◽  
Yu Feng Guo ◽  
Lei Lei Liu ◽  
Xin Cun Ji ◽  
...  
Keyword(s):  
Phase Noise ◽  
Figure Of Merit ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Voltage Controlled Oscillator ◽  
Frequency Range ◽  
Supply Current ◽  
Low Phase Noise ◽  
Lc Vco

A novel low phase noise LC Voltage Controlled Oscillator (LC-VCO) is designed in standard 0.18μm CMOS technology. Instead of common NMOS cross-pairs for a conventional complementary LC VCO, both body-biasing and Q-enhancement techniques are employed to provide a larger negative resistance for the VCO. Post-layout simulations showed that it can oscillate at a frequency range of 4.34-4.73GHz, and comsume a supply current of 1.52mA from a supply voltage of 1.8V. The VCO achieves a phase noise of -132.8dBc/Hz @ 1MHz offset and a figure of merit (FOM) of -195.9dBc/Hz at the frequency of 4.5GHz. A die area of 475μm×498.6μm is occupied.

scholarly journals A LOW PHASE NOISE, POWER EFFICIENT VOLTAGE CONTROLLED OSCILLATOR USING 0.18-μM CMOS TECHNOLOGY

2014 ◽  
pp. 256-259
Author(s):  
AJIT SAMASGIKAR
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Tuning Range ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Noise Power ◽  
Voltage Controlled Oscillator ◽  
Power Efficient ◽  
Sustained Oscillations ◽  
Low Phase Noise

A low phase noise, power efficient VCO using UMC 0.18μm CMOS technology has been proposed in this paper. The proposed VCO has a tuning range of 9.71GHz to 9.9GHz, with a phase noise of -79.88 dBc/Hz @ 600kHz offset. The Vtune ranging between 1V - 1.5V generates sustained oscillations. The maximum power consumption of the VCO is 11.9mW using a supply voltage of 1.8V with ±10% variation.

A Wideband Gain Linearized Microwave Voltage Controlled Oscillator with Low Phase Noise Variation in Nanometer CMOS Technology

2015 ◽  
Vol 24 (03) ◽  
pp. 1550024 ◽  
Author(s):  
Mohammed Aqeeli ◽  
Abdullah Alburaikan ◽  
Cahyo Muvianto ◽  
Xianjun Huang ◽  
Zhirun Hu
Keyword(s):  
Phase Noise ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Lower Phase ◽  
Nanometer Cmos ◽  
Digitally Controlled ◽  
Binary Weighted ◽  
Low Phase Noise

A wideband CMOS LC tank voltage-controlled oscillator (VCO) with low phase noise variations and a linearized gain has been designed using a new binary-weighted switched-capacitor and digitally-controlled varactor bank. The novel design has the advantages of more linear VCO frequency tuning, lower phase noise and reduced gain to variations in supply voltage. The proposed VCO has been designed using UMC 90-nm, 6-metal CMOS technology and features phase noise variation of less than 4.9 dBc/Hz. The VCO operates from 3.45 to 6.55 GHz, with phase noise of -133.4 dBc/Hz at a 1 MHz offset, a figure of merit (FoM) of -203.3 dBc/Hz, less than 41 dBm spurious harmonics, and a total VCO core current consumption of 1.18 mA from a 3.3 V voltage supply. To the authors' knowledge, this is the lowest phase noise variation ever reported.

scholarly journals K-Band Low Phase Noise VCO Based on Q-Boosted Switched Inductor

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1132 ◽  
Author(s):  
Zhe Chen ◽  
Ji-Xin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Fang Zhu
Keyword(s):  
Resonance Frequency ◽  
Phase Noise ◽  
Quality Factor ◽  
Eddy Current ◽  
Noise Voltage ◽  
Secondary Coil ◽  
Voltage Controlled Oscillator ◽  
Bicmos Process ◽  
Low Phase Noise ◽  
K Band

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2–5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.

Sign in / Sign up

Export Citation Format

Share Document