Ambipolar charge transport in a donor-acceptor-donor-type conjugated block copolymer and its gate-voltage-controlled thin film transistor memory

2017 ◽  
Vol 55 (19) ◽  
pp. 3223-3235 ◽  
Author(s):  
Ji Hyung Lee ◽  
Dae Hee Lee ◽  
Hyung Jong Kim ◽  
Suna Choi ◽  
Gi Eun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Block Copolymer ◽  
Charge Transport ◽  
Gate Voltage ◽  
Thin Film Transistor ◽  
Donor Type ◽  
Donor Acceptor

scholarly journals Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Dan-Dan Liu ◽  
Wen-Jun Liu ◽  
Jun-Xiang Pei ◽  
Lin-Yan Xie ◽  
Jingyong Huo ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Gate Voltage ◽  
Oxygen Vacancies ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Gate Bias ◽  
Voltage Polarity ◽  
Bias Pulse

AbstractAmorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-polarity-dependent programming behaviors of an a-IGZO TFT memory with an atomic-layer-deposited ZnO charge trapping layer (CTL). The pristine devices demonstrate electrically programmable characteristics not only under positive gate biases but also under negative gate biases. In particular, the latter can generate a much higher programming efficiency than the former. Upon applying a gate bias pulse of +13 V/1 μs, the device shows a threshold voltage shift (ΔVth) of 2 V; and the ΔVth is as large as −6.5 V for a gate bias pulse of −13 V/1 μs. In the case of 12 V/1 ms programming (P) and −12 V/10 μs erasing (E), a memory window as large as 7.2 V can be achieved at 103 of P/E cycles. By comparing the ZnO CTLs annealed in O2 or N2 with the as-deposited one, it is concluded that the oxygen vacancy (VO)-related defects dominate the bipolar programming characteristics of the TFT memory devices. For programming at positive gate voltage, electrons are injected from the IGZO channel into the ZnO layer and preferentially trapped at deep levels of singly ionized oxygen vacancy (VO+) and doubly ionized oxygen vacancy (VO2+). Regarding programming at negative gate voltage, electrons are de-trapped easily from neutral oxygen vacancies because of shallow donors and tunnel back to the channel. This thus leads to highly efficient erasing by the formation of additional ionized oxygen vacancies with positive charges.

scholarly journals A-π-D-π-A-Based Small Molecules for OTFTs Containing Diketopyrrolopyrrole as Acceptor Units

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 817
Author(s):  
Baji Shaik ◽  
Mujeeb Khan ◽  
Mohammed Rafi Shaik ◽  
Mohammed A.F. Sharaf ◽  
Doumbia Sekou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Properties ◽  
Small Molecules ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Cast Films ◽  
Donor Acceptor ◽  
P Type

A-π-D-π-A-based small molecules 6,6′-((thiophene-2,5-diylbis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-T) and 6,6′-(((2,3-dihydrothieno[3,4-b][1,4]dioxine-5,7-diyl)bis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-EDOT) have been designed and synthesized. The diketopyrrolopyrrole acts as an electron acceptor, while the thiophene or 3,4-ethylenedioxythiophene acts as an electron donor. The donor–acceptor groups are connected by an ethynyl bridge to further enhance the conjugation. The optoelectronics, electrochemical, and thermal properties have been investigated. Organic thin film transistor (OTFT) devices prepared from TDPP-T and TDPP-EDOT have shown p-type mobility. In as cast films, TDPP-T and TDPP-EDOT have shown a hole mobility of 5.44 × 10−6 cm2 V−1 s−1 and 4.13 × 10−6 cm2 V−1 s−1, respectively. The increase in the mobility of TDPP-T and TDPP-EDOT OTFT devices was observed after annealing at 150 °C, after which the mobilities were 3.11 × 10−4 cm2 V−1 s−1 and 2.63 × 10−4 cm2 V−1 s−1, respectively.

Charge Transport Characteristics of Surface‐Complexed Quantum Dot in a Thin Film Transistor

2020 ◽  
Vol 7 (4) ◽  
pp. 1901665
Author(s):  
Kasturi Gogoi ◽  
Sabyasachi Pramanik ◽  
Arun Chattopadhyay
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Charge Transport ◽  
Thin Film Transistor

scholarly journals Naphthalimide end capped anthraquinone based solution-processable n-channel organic semiconductors: effect of alkyl chain engineering on charge transport

2018 ◽  
Vol 6 (14) ◽  
pp. 3774-3786 ◽  
Author(s):  
Thu-Trang Do ◽  
Yasunori Takeda ◽  
Sergei Manzhos ◽  
John Bell ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Small Molecules ◽  
Chain Length ◽  
Organic Semiconductors ◽  
Alkyl Chain ◽  
Thin Film Transistor ◽  
Alkyl Chain Length ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

A series of electron deficient small molecules using fused anthraquinone and naphthalimide conjugated backbone with different alkyl chain length with lower LUMO for n-channel organic thin film transistor.

Self assembled block copolymer gate insulators with cylindrical nanostructures for pentacene thin film transistor

2010 ◽  
Vol 18 (8) ◽  
pp. 777-786 ◽  
Author(s):  
Pil Sung Jo ◽  
Youn Jung Park ◽  
Seok Ju Kang ◽  
Tae Hee Kim ◽  
Cheolmin Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Block Copolymer ◽  
Thin Film Transistor ◽  
Gate Insulators ◽  
Self Assembled

Fabrication and Charge Transport Modeling of Thin-Film Transistor Based on Carbon Nanotubes Network

2014 ◽  
Vol 13 (4) ◽  
pp. 795-804 ◽  
Author(s):  
Patrizia Lamberti ◽  
Sayed Alireza Mousavi ◽  
Giovanni Spinelli ◽  
Vincenzo Tucci ◽  
Veit Wagner
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Charge Transport ◽  
Thin Film Transistor ◽  
Transport Modeling
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