Organic light-emitting device dark spot growth behavior analysis by diffusion reaction theory

2001 ◽  
Vol 39 (14) ◽  
pp. 1697-1703 ◽  
Author(s):  
Lin Ke ◽  
Shuang Fang Lim ◽  
Soo Jin Chua
Keyword(s):  
Behavior Analysis ◽  
Growth Behavior ◽  
Diffusion Reaction ◽  
Dark Spot ◽  
Light Emitting ◽  
Organic Light ◽  
Reaction Theory

Correlation of Current Noise Behavior and Dark Spot Formation in Organic Light-Emitting Diodes

2008 ◽  
Vol 29 (1) ◽  
pp. 67-69 ◽  
Author(s):  
Lin Ke ◽  
Ramadas Senthil Kumar ◽  
Chellappan Vijila ◽  
Soo Jin Chua ◽  
X. W. Sun
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Current Noise ◽  
Dark Spot ◽  
Light Emitting ◽  
Organic Light ◽  
Spot Formation

Secondary Ion Mass Spectroscopy Study of Failure Mechanism in Organic Light Emitting Devices

2001 ◽  
Vol 710 ◽  
Author(s):  
Lin Ke ◽  
Keran Zhang ◽  
Ramadas Senthil Kumar ◽  
Soo Jin Chua ◽  
Nikolai Yakovlev
Keyword(s):  
Mass Spectroscopy ◽  
Initial Point ◽  
Interface Roughness ◽  
Dark Spot ◽  
Secondary Ion Mass Spectroscopy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Defect Area ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy is used to examine the dark, non-emissive defects on the organic light-emitting device. Boundary movements are originated from electrode imperfection. Due to flexibility and movability of polymer layer, distribution variations and a more severe Indium and Calcium overlapping are detected in dark spot defect area. Boundary movements are not in good agreement between different layers. Interfaces became undulate. The closeness and proximity between the In sharp spikes and cathode metal protrusion leads to the initial point of dark spot. We demonstrate that the presence of cathode imperfection and interface roughness of different layers correlated to the device dark spot formation.

Influence of Electrode Modification by Ar+ Ion Beam Upon Passivation and Electrical Characteristics in Organic Light-Emitting Diodes

2005 ◽  
Vol 20 (1) ◽  
pp. 81-92 ◽  
Author(s):  
Soon Moon Jeong ◽  
Won Hoi Koo ◽  
Sang Hun Choi ◽  
Sung Jin Jo ◽  
Hong Koo Baik ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Light Emitting Diodes ◽  
Ion Beam ◽  
Organic Light Emitting Diodes ◽  
Dark Spot ◽  
Light Emitting ◽  
Ion Beam Assisted Deposition ◽  
Organic Light ◽  
Area Increase ◽  
Large Contact Area

Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p-phenylene vinylene.

Mechanism of dark-spot degradation of organic light-emitting devices

2005 ◽  
Vol 86 (4) ◽  
pp. 041105 ◽  
Author(s):  
P. Melpignano ◽  
A. Baron-Toaldo ◽  
V. Biondo ◽  
S. Priante ◽  
R. Zamboni ◽  
...  
Keyword(s):  
Dark Spot ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

scholarly journals Dark spot formation mechanism in organic light emitting diodes

2006 ◽  
Vol 89 (13) ◽  
pp. 132108 ◽  
Author(s):  
Soo Young Kim ◽  
Kwang Young Kim ◽  
Yoon-Heung Tak ◽  
Jong-Lam Lee
Keyword(s):  
Formation Mechanism ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Dark Spot ◽  
Light Emitting ◽  
Organic Light ◽  
Spot Formation
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