Bipolar Resistive Switching Properties of Hf0.5 Zr0.5 O2 Thin Film for Flexible Memory Applications

2017 ◽  
Vol 215 (1) ◽  
pp. 1700396 ◽  
Author(s):  
Zhipeng Wu ◽  
Jun Zhu ◽  
Yunxia Zhou ◽  
Xingpeng Liu
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Memory Applications

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

2020 ◽  
Vol 46 (13) ◽  
pp. 21196-21201 ◽  
Author(s):  
Hui-Chuan Liu ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nanostructured Tio2 ◽  
Zro2 Thin Film ◽  
Conduction Mechanisms

IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550031 ◽  
Author(s):  
PRANAB KUMAR SARKAR ◽  
ASIM ROY
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Cell ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Switching Performance ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Compliance ◽  
Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

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