IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550031 ◽  
Author(s):  
PRANAB KUMAR SARKAR ◽  
ASIM ROY
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Cell ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Switching Performance ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Compliance ◽  
Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

scholarly journals High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

2012 ◽  
pp. 74-77
Author(s):  
Somnath Mondal ◽  
Fa-Hsyang Chen ◽  
Tung-Ming Pan
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Sandwich Structure ◽  
Oxygen Vacancies ◽  
Memory Cell ◽  
Switching Behavior ◽  
Electrical Performance ◽  
Data Retention ◽  
Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications
Sign in / Sign up

Export Citation Format

Share Document