Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CF02 ◽  
Author(s):  
Masanobu Hiroki ◽  
Noriyuki Watanabe ◽  
Narihiko Maeda ◽  
Haruki Yokoyama ◽  
Kazuhide Kumakura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine

1991 ◽  
Vol 30 (Part 2, No. 10A) ◽  
pp. L1718-L1721 ◽  
Author(s):  
Toshihide Kikkawa ◽  
Tatsuya Ohori ◽  
Eizou Mitani ◽  
Masahisa Suzuki ◽  
Hitoshi Tanaka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

2003 ◽  
Vol 47 (6) ◽  
pp. 1075-1079 ◽  
Author(s):  
M.A. Mastro ◽  
D. Tsvetkov ◽  
V. Soukhoveev ◽  
A. Usikov ◽  
V. Dmitriev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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