Suitability of Rare-Earth Oxides for Use in Thin Film Transistors

An experimental survey of rare earth oxides for use in thin film capacitors has been completed. Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown strengths in excess of 5 × 106V/cm were observed. Relative dielectric constants measured for the oxides range from two to twenty, and measured capacitances were as high as 156 × 10−9F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the most promise as potential materials for use in thin film capacitors.

Download Full-text

An experimental investigation of the dielectric properties of thermally evaporated rare earth oxides for use in thin-film capacitors

Microelectronics Reliability ◽

10.1016/0026-2714(76)90575-8 ◽

1976 ◽

Vol 15 (5) ◽

pp. 381

Keyword(s):

Thin Film ◽

Experimental Investigation ◽

Rare Earth ◽

Dielectric Properties ◽

Rare Earth Oxides ◽

Thin Film Capacitors

Download Full-text

Thin-Film Transistors Based on Langmuir−Blodgett Films of Heteroleptic Bis(phthalocyaninato) Rare Earth Complexes

Langmuir ◽

10.1021/la050150t ◽

2005 ◽

Vol 21 (14) ◽

pp. 6527-6531 ◽

Cited By ~ 52

Author(s):

Wei Su ◽

Jianzhuang Jiang ◽

Kai Xiao ◽

Yanli Chen ◽

Quanqin Zhao ◽

...

Keyword(s):

Thin Film ◽

Rare Earth ◽

Thin Film Transistors ◽

Rare Earth Complexes ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films

Download Full-text

Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.320.69 ◽

2006 ◽

Vol 320 ◽

pp. 69-72 ◽

Cited By ~ 1

Author(s):

Masao Kondo ◽

Kazuaki Kurihara

Keyword(s):

Thin Film ◽

Rare Earth ◽

Buffer Layer ◽

Layer Structure ◽

Rare Earth Oxide ◽

Calcium Titanate ◽

Rare Earth Oxides ◽

Yttria Stabilized Zirconia ◽

Buffer Layers ◽

Stabilized Zirconia

The influence of a rare earth oxide/yttria-stabilized zirconia (YSZ) double buffer layer structure on the orientation of a perovskite thin film was investigated on (100) silicon substrates. A calcium titanate perovskite film with a mixture of (110) and (100) orientation was grown epitaxially on a YSZ buffer layer. Since rare earth oxides have almost the same chemical nature and different lattice parameters, it is anticipated that the lattice parameter of the buffer layer can be controlled by changing the rare earth element. An (100) oriented epitaxial calcium titanate film was obtained by changing the composition of rare earth oxides on the YSZ/Si substrate.

Download Full-text

Nitrogen-added Al rare-earth alloys for thin film transistors

Thin Solid Films ◽

10.1016/s0040-6090(98)01194-8 ◽

1999 ◽

Vol 337 (1-2) ◽

pp. 113-117 ◽

Cited By ~ 1

Author(s):

Toshiaki Arai ◽

Hiroshi Takatsuji ◽

Hideo Iiyori

Keyword(s):

Thin Film ◽

Rare Earth ◽

Thin Film Transistors ◽

Rare Earth Alloys

Download Full-text

Tetracene Based OTFT with Nd2O3-dielectric Layer

Journal of Scientific Research ◽

10.3329/jsr.v2i2.4094 ◽

2010 ◽

Vol 2 (2) ◽

pp. 214-220 ◽

Cited By ~ 1

Author(s):

D. Saikia ◽

R. Sarma ◽

P. Saikia ◽

P. K. Saikia

Keyword(s):

Thin Film ◽

Rare Earth ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Hole Concentration ◽

Rare Earth Oxide ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Low Leakage ◽

Low Leakage Current

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)

Download Full-text