Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3

2017 ◽  
Vol 254 (8) ◽  
pp. 1600679 ◽  
Author(s):  
Kenji Iso ◽  
Karen Matsuda ◽  
Nao Takekawa ◽  
Hisashi Murakami ◽  
Akinori Koukitu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Shape

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach

CrystEngComm ◽  
2021 ◽  
Vol 23 (6) ◽  
pp. 1423-1428
Author(s):  
Daichi Yosho ◽  
Yuriko Matsuo ◽  
Akira Kusaba ◽  
Pawel Kempisty ◽  
Yoshihiro Kangawa ◽  
...  
Keyword(s):  
Ab Initio ◽  
Phase Diagrams ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Shape ◽  
Surface Phase ◽  
Wulff Construction ◽  
Temperature And Pressure

An ab initio-based approach is used to study the facet stability of GaN during THVPE. The surface phase diagrams as functions of temperature and pressure are determined. Wulff construction is used to predict the crystal shape.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document