Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers

2003 ◽  
Vol 0 (7) ◽  
pp. 2141-2144
Author(s):  
H. Murakami ◽  
N. Kawaguchi ◽  
Y. Kangawa ◽  
Y. Kumagai ◽  
A. Koukitu
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Crystalline Quality

Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

2004 ◽  
Vol 831 ◽  
Author(s):  
Daisuke Muto ◽  
Ryotaro Yoneda ◽  
Hiroyuki Naoi ◽  
Masahito Kurouchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Constant Independent ◽  
Nitrogen Flux ◽  
Sapphire Substrates ◽  
Nitridation Process ◽  
Flux Modulation

ABSTRACTThe effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.

Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE

2015 ◽  
Vol 414 ◽  
pp. 15-20 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Sakuntam Sanorpim ◽  
Somyod Denchitcharoen ◽  
Kenjiro Uesugi ◽  
Shigeyuki Kuboya ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Crystalline Quality ◽  
Step Growth

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Oxygen Concentration ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Temperature Growth ◽  
Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

Effect of low temperature Ge seed layer and post thermal annealing on quality of Ge1− x Si x (0.05 ≤ x ≤ 0.1) graded buffer layers by UHV-CVD

2014 ◽  
Vol 10 (4) ◽  
pp. 759-762
Author(s):  
Chi-Lang Nguyen ◽  
Nguyen Hong Quan ◽  
Binh-Tinh Tran ◽  
Yung-Hsuan Su ◽  
Shih-Hsuan Tang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Seed Layer ◽  
Buffer Layers

Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

2003 ◽  
Vol 251 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
Kenji Momose ◽  
Hiroo Yonezu ◽  
Yuzo Furukawa ◽  
Atsushi Utsumi ◽  
Yusuke Yoshizumi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Crystalline Quality ◽  
High Nitrogen ◽  
Temperature Growth ◽  
Low Temperature Growth

Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer

2004 ◽  
Vol 266 (4) ◽  
pp. 505-510 ◽  
Author(s):  
J.F. Yan ◽  
Y.M. Lu ◽  
Y.C. Liu ◽  
H.W. Liang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Crystalline Quality ◽  
Zno Buffer Layer

scholarly journals Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

1999 ◽  
Vol 4 (S1) ◽  
pp. 870-877 ◽  
Author(s):  
H. Amano ◽  
M. Iwaya ◽  
N. Hayashi ◽  
T. Kashima ◽  
M. Katsuragawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Group Iii Nitrides ◽  
Crystalline Quality ◽  
Structural Quality ◽  
Group Iii

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.

EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

2013 ◽  
Vol 06 (04) ◽  
pp. 1350044
Author(s):  
CHEN CONG ◽  
LU YANG FAN ◽  
HE HAI PING ◽  
WU KE WEI ◽  
YE ZHI ZHEN
Keyword(s):  
Low Temperature ◽  
Au Nanoparticles ◽  
Critical Role ◽  
Zno Nanorods ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Zno Nanostructures ◽  
Gaseous Species ◽  
Nano Zno

The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au -assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor–solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO , which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano- ZnO was improved due to the presence of Au , according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano- ZnO may be due to the less lattice mismatch.

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