The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers
Films of a-Si:C have been prepared by vacuum deposition while the substrate was simultaneously bombarded with 1000-V electrons. Some film properties (electrical, optical) are compared for films deposited both with and without electron beam irradiation. It is concluded that the effect of the electron beam irradiation is to produce a film with a structure closer to that of an ideal random network. Some of the films are photoconducting and have undoped electrical characteristics similar to those of a-Si:H.
Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models